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Trans MOSFET N-CH GaN 100V 60A 8-Pin Die T/R


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Overview of EPC2218

The EPC2218 is a gallium nitride (GaN) power transistor designed for high-frequency, high-efficiency applications.This transistor offers a compact and efficient solution for power conversion in various electronic systems.


(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Gate terminal for controlling the transistor
  • Source:Source terminal for the transistor
  • Drain:Drain terminal for the transistor
  • VCC:Positive power supply
  • GND:Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the EPC2218 for a visual representation.

Key Features

  • High-Frequency Operation:The EPC2218 operates at high frequencies, suitable for applications requiring fast switching times.
  • High Efficiency:This GaN power transistor offers high efficiency levels, reducing power losses in power conversion systems.
  • Compact Design:With a compact form factor,the EPC2218 enables space-saving designs in electronic applications.
  • Low ON-Resistance:Features low ON-resistance for minimal conduction losses and improved power efficiency.
  • Enhanced Thermal Performance:The EPC2218 is designed for enhanced thermal dissipation, ensuring reliable performance under high-power conditions.

Note:For detailed technical specifications,please refer to the EPC2218 datasheet.


  • Power Electronics:Suitable for use in power electronics applications such as power supplies,inverters,and converters.
  • RF Amplifiers:Ideal for RF amplifier applications requiring high-frequency operation and efficiency.
  • Wireless Power Transfer:Used in wireless power transfer systems for efficient power conversion and transmission.


The EPC2218 is a high-performance GaN power transistor designed for high-frequency power conversion applications.It provides efficient and reliable power handling capabilities in electronic systems.

Usage Guide

  • Power Supply:Apply the positive voltage supply (VCC) and connect the ground (GND) for proper operation of the transistor.
  • Control Signals:Utilize the gate terminal to control the switching operation of the EPC2218 for desired power conversion.
  • Heat Dissipation:Ensure proper thermal management to maintain the transistor's performance under high-power conditions.

Frequently Asked Questions

Q:What is the typical operating frequency range of the EPC2218?
A:The EPC2218 operates in the high-frequency range, typically above 1 MHz, catering to fast-switching applications.

Q:Does the EPC2218 require additional heat sinking for thermal management?
A:While the EPC2218 is designed for enhanced thermal performance, additional heat sinking may be required for extended high-power operation.


For similar functionalities, consider these alternatives to the EPC2218:

  • EPC2034:A GaN power transistor with comparable performance characteristics to the EPC2218, suitable for high-frequency power applications.
  • Infineon CoolGaN™:An alternative GaN power transistor series offering high efficiency and power handling capabilities for power electronics.


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
Category Power MOSFET Material GaN
Configuration Single Triple Drain Quad Source Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100 Maximum Gate Source Voltage (V) 6
Operating Junction Temperature (°C) -40 to 150 Maximum Continuous Drain Current (A) 60
Maximum Drain Source Resistance (MOhm) 3.2@5V Typical Gate Charge @ Vgs (nC) 10.5@5V
Typical Input Capacitance @ Vds (pF) 1189@50V Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150 Package Height 0.52
Package Width 1.95 Package Length 3.5
PCB changed 8 Supplier Package Die
Pin Count 8

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