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Trans MOSFET N-CH GaN 200V 32A 6-Pin Die T/R


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Overview of EPC2215

The EPC2215 is an enhancement-mode gallium nitride (eGaN) power transistor designed for high-frequency power conversion applications. This IC combines power management and efficiency with a compact footprint, making it suitable for advanced power electronics designs.


(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • VIN:Input Voltage
  • VOUT:Output Voltage
  • GND:Ground
  • EN:Enable Pin
  • FB:Feedback Pin
  • VCC:Positive Power Supply
  • VIN:Input Voltage
  • VOUT:Output Voltage
  • GND:Ground
  • EN:Enable Pin
  • FB:Feedback Pin
  • VCC:Positive Power Supply
  • SD:Shutdown Pin
  • FB:Feedback Pin
  • VCC:Positive Power Supply
  • VCC:Positive Power Supply

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the EPC2215 IC for a more visual representation.

Key Features

  • High-Frequency Operation:The EPC2215 operates efficiently at high frequencies, making it suitable for switching power supply applications.
  • Enhancement-Mode Operation:This eGaN transistor operates in enhancement mode, providing ease of use in power management circuits.
  • Low On-Resistance:The EPC2215 offers low on-resistance, minimizing power loss and heat generation in power conversion.
  • Compact Package:Available in a small footprint, the EPC2215 facilitates compact and efficient power electronics designs.
  • High Efficiency:The gallium nitride technology used in the EPC2215 ensures high efficiency and reliability in power conversion applications.

Note:For detailed technical specifications,please refer to the EPC2215 datasheet.


  • Switching Power Supplies:The EPC2215 is ideal for use in high-frequency switching power supplies for efficient power management.
  • Power Inverters:This eGaN transistor can be used in power inverters for converting DC to AC power with high efficiency.
  • Motor Drives:The EPC2215 is suitable for motor drive applications requiring high-speed switching capabilities.


The EPC2215 is an enhancement-mode gallium nitride power transistor designed for high-frequency power conversion. It offers efficient power management and reliability in compact power electronics designs.

Usage Guide

  • Power Supply:Connect VIN(Pin 1)to the input voltage source and GND(Pin 3,6,9)to ground.
  • Enable Pin:Use the EN(Pin 4)pin to enable or disable the transistor's operation.
  • Feedback Pin:Connect FB(Pin 5)to provide feedback for stable operation in power management circuits.

Frequently Asked Questions

Q:What is the advantage of using eGaN transistors like the EPC2215?
A:eGaN transistors like the EPC2215 offer higher efficiency, faster switching speeds, and reduced footprint compared to traditional silicon-based transistors.

Q:Can the EPC2215 handle high-power applications?
A:Yes, the EPC2215 is designed to handle high-power applications efficiently due to its gallium nitride technology and low on-resistance characteristics.


For similar functionalities,consider these alternatives to the EPC2215:

  • EPC2111:A similar eGaN power transistor offering comparable performance characteristics to the EPC2215.
  • EPC2052:This is another eGaN transistor suitable for high-frequency power conversion applications.


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
Category Power MOSFET Material GaN
Configuration Single Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200 Maximum Gate Source Voltage (V) 6
Maximum Continuous Drain Current (A) 32 Maximum Drain Source Resistance (mOhm) 8@5V
Typical Gate Charge @ Vgs (nC) 13.6@5V Typical Input Capacitance @ Vds (pF) 1356@100V
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Packaging Tape and Reel Package Height 0.1
Package Width 1.6 Package Length 4.6
PCB changed 6 Supplier Package Die
Pin Count 6

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