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Trans MOSFET N-CH GaN 100V 29A 6-Pin Die T/R


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Overview of EPC2204

The EPC2204 is a 200V, 40mΩ eGaN FET in a tiny 2mmx2mm wafer-level chip-scale package. These products operate over a wide voltage range of 30V to 200V and have a maximum RDS(on) of 40mΩ. They are designed for applications with demanding requirements for high efficiency and power density in a small size.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • VIN: Voltage Input
  • VOUT: Voltage Output
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the EPC2204 for a visual representation.

Key Features

  • High Voltage Rating: Operates at a wide voltage range of 30V to 200V, suitable for high-voltage applications.
  • Low RDS(on): The EPC2204 features low on-state resistance for high efficiency and minimal power dissipation.
  • Compact Size: Packaged in a tiny 2mmx2mm wafer-level chip-scale package, providing high power density in a small form factor.
  • Reliable Performance: Designed for demanding applications with requirements for high efficiency and power density.

Note: For detailed technical specifications, please refer to the EPC2204 datasheet.


  • High-Efficiency Power Supplies: Ideal for use in high-efficiency power conversion systems.
  • Motor Drives: Suitable for motor drive applications requiring high voltage and high efficiency.
  • Lidar Systems: Used in lidar (Light Detection and Ranging) systems for high-performance sensing applications.


The EPC2204 is a high-voltage, low on-state resistance eGaN FET designed for high-efficiency power conversion and high-density power applications.

Usage Guide

  • Gate Connection: Connect the G (Gate) pin to the gate driver for proper control of the eGaN FET.
  • Voltage Connections: Connect VIN (Voltage Input) and VOUT (Voltage Output) for the desired power conversion operation.

Frequently Asked Questions

Q: What is the maximum voltage rating for the EPC2204?
A: The EPC2204 operates over a wide voltage range of 30V to 200V.

Q: Is the EPC2204 suitable for compact applications?
A: Yes, the EPC2204 is packaged in a tiny 2mmx2mm wafer-level chip-scale package, offering high power density in a small size.


For similar functionalities, consider these alternatives to the EPC2204:

  • EPC2216: This is a high-voltage, low RDS(on) eGaN FET with similar performance characteristics to the EPC2204.
  • SiHP065N60E: A 600V, 65mΩ high-voltage MOSFET suitable for high-efficiency power conversion applications.


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
Automotive No PPAP No
Category Power MOSFET Material GaN
Configuration Single Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100 Maximum Gate Source Voltage (V) 6|-4
Maximum Continuous Drain Current (A) 29 Maximum Drain Source Resistance (mOhm) 6@5V
Typical Gate Charge @ Vgs (nC) 5.7@5V Typical Input Capacitance @ Vds (pF) 644@50V
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Package Height 0.52 Package Width 1.5
Package Length 2.5 PCB changed 6
Supplier Package Die Pin Count 6

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