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Trans MOSFET N-CH GaN 200V 48A 24-Pin Die T/R


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Overview of EPC2034C

The EPC2034C is a gallium nitride (GaN) power transistor designed to deliver high-frequency switching with enhanced performance and efficiency. It is ideal for use in high-speed power conversion applications such as wireless power, envelope tracking, and class-E power amplifiers.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VBUS: Input voltage supply
  • VSW: Switching node voltage
  • GND: Ground connection
  • EN: Enable pin for device control
  • NC: No connection
  • PG: Power ground
  • RF: Radio frequency input
  • RT: Radio frequency output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the EPC2034C for a visual representation.

Key Features

  • High-Frequency Operation: Capable of high-frequency switching, suitable for wireless power and RF applications.
  • Enhanced Efficiency: GaN technology allows for improved power conversion efficiency compared to traditional silicon transistors.
  • Small Footprint: Compact package design for space-constrained applications.
  • Wide Voltage Range: Supports a wide input voltage range, making it adaptable to different power supply configurations.
  • Integrated ESD Protection: Includes integrated electrostatic discharge (ESD) protection for robust operation in challenging environments.

Note: For detailed technical specifications, please refer to the EPC2034C datasheet.


  • Wireless Power Systems: Well-suited for wireless power transfer applications, such as wireless charging and power transmission.
  • Envelope Tracking: Used in envelope tracking systems for efficient power management in RF amplifiers.
  • RF Power Amplifiers: Suitable for use in class-E RF power amplifiers for high-frequency operation.


The EPC2034C is a GaN power transistor designed to enable high-frequency switching and improved power efficiency in various power conversion applications. Its compact design and robust features make it an ideal choice for wireless power and RF systems.

Usage Guide

  • Power Supply: Connect VBUS (Pin 1) to the input voltage supply.
  • Switching Node: Connect VSW (Pin 2) to the switching node in the power circuit.
  • Enable Control: Use the EN (Pin 4) pin to enable or disable the device for power control.

Frequently Asked Questions

Q: What is the maximum frequency of operation for the EPC2034C?
A: The EPC2034C is designed for high-frequency operation suitable for RF and wireless power applications. Specific frequency details can be found in the datasheet.

Q: Can the EPC2034C be used in automotive power applications?
A: Yes, the EPC2034C's wide voltage range and robust design make it suitable for automotive power conversion and related applications.


For similar functionalities, consider these alternatives to the EPC2034C:

  • EPC2035: This is a related GaN power transistor with similar performance characteristics suitable for high-frequency power conversion.
  • Infineon CoolGaN: These GaN power transistors from Infineon offer comparable features and performance for high-frequency applications.


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US) EAR99 Part Status Active
Category Power MOSFET Material GaN
Configuration Single Channel Mode Enhancement
Channel Type N Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200 Maximum Gate Source Voltage (V) 6
Maximum Continuous Drain Current (A) 48 Maximum Drain Source Resistance (MOhm) 8@5V
Typical Gate Charge @ Vgs (nC) 11.1@5V Typical Input Capacitance @ Vds (pF) 1155@100V
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Packaging Tape and Reel Package Height 0.51
Package Width 2.6 Package Length 4.6
PCB changed 24 Standard Package Name Die
Supplier Package Die Pin Count 24

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