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DZT5551-13

BJT devices designed for 1000mW power and 160Vceo voltage

Quantity Unit Price(USD) Ext. Price
5 $0.188 $0.94
50 $0.148 $7.40
150 $0.126 $18.90
500 $0.112 $56.00
2500 $0.101 $252.50
5000 $0.094 $470.00

Inventory:8,408

*The price is for reference only.
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Submit your quote request for DZT5551-13 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of DZT5551-13

The DZT5551-13 is a high-speed switching diode designed for use in various electronic circuits. This diode features fast switching times and low forward voltage drop, making it suitable for applications requiring rapid switching and low power dissipation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A: Anode
  • K: Cathode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DZT5551-13 diode for a visual representation.

Key Features

  • High-Speed Switching: The DZT5551-13 offers fast switching times, making it ideal for high-frequency applications.
  • Low Forward Voltage Drop: With a low forward voltage drop, this diode minimizes power loss and heat generation.
  • Low Leakage Current: The diode has low leakage current, ensuring efficient operation in off-state conditions.
  • Compact Size: The DZT5551-13 comes in a small form factor, enabling space-saving designs in electronic circuits.
  • Temperature Stability: This diode exhibits good temperature stability, maintaining consistent performance across a range of operating conditions.

Note: For detailed technical specifications, please refer to the DZT5551-13 datasheet.

Application

  • Switching Circuits: Suitable for use in high-speed switching circuits for signal processing and digital applications.
  • Pulse Generation: Used in pulse generation circuits where fast switching characteristics are required.
  • Overvoltage Protection: Employed for overvoltage protection in electronic systems to prevent damage to sensitive components.

Functionality

The DZT5551-13 is a high-speed switching diode that enables rapid switching operations with low power loss. It plays a crucial role in various electronic circuits where fast and efficient switching is essential.

Usage Guide

  • Forward Bias: Connect the anode (A) to the positive side and the cathode (K) to the negative side for forward biasing.
  • Reverse Bias: Apply a reverse bias voltage across the diode to block current flow in the off state.

Frequently Asked Questions

Q: What is the maximum forward current rating of the DZT5551-13?
A: The DZT5551-13 typically has a maximum forward current rating of 500mA.

Q: Is the DZT5551-13 suitable for high-frequency applications?
A: Yes, the DZT5551-13 is designed for high-speed switching and is suitable for high-frequency applications requiring fast response times.

Equivalent

For similar functionalities, consider these alternatives to the DZT5551-13:

  • 1N4148: A popular general-purpose switching diode with comparable characteristics to the DZT5551-13.
  • BAV99: A dual switching diode offering similar performance to the DZT5551-13 in a different package configuration.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-223-4
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 160 V Collector- Base Voltage VCBO 180 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 600 mA Pd - Power Dissipation 1 W
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series DZT5551
Brand Diodes Incorporated DC Collector/Base Gain hfe Min 30 at 50 mA, 5 V
Height 1.65 mm Length 6.7 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2500
Subcategory Transistors Technology Si
Width 3.7 mm Unit Weight 0.003951 oz

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DZT5551-13

BJT devices designed for 1000mW power and 160Vceo voltage

Inventory:

8,408