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DTC114YUAT106

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN

Inventory:5,484

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Overview of DTC114YUAT106

Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.3) Only the on/off conditions need to be set for operation, making device design easy.

Key Features

  • 1) Built-in bias resistors enable the configuration of an
  • inverter circuit without connecting external input
  • resistors (see equivalent circuit).
  • 2) The bias resistors consist of thin-film resistors with
  • complete isolation to allow negative biasing of the
  • input. They also have the advantage of almost
  • completely eliminating parasitic effects.
  • 3) Only the on/off conditions need to be set for
  • operation, making device design easy.

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.75
Samacsys Manufacturer ROHM Semiconductor Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 68
JESD-30 Code R-PDSO-G3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

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