DS1245Y-100

The DS1245Y-100 is a 1024k NV SRAM (Non-Volatile Static Random Access Memory) with a 100ns access time and a 10-year minimum data retention. It combines the high-performance features of static RAM with the non-volatility of EEPROM (Electrically Erasable Programmable Read-Only Memory) to provide an ideal solution for data storage applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A16: Address Input 16
• A15: Address Input 15
• A14: Address Input 14
• A13: Address Input 13
• A12: Address Input 12
• A11: Address Input 11
• A10: Address Input 10
• A9: Address Input 9
• A8: Address Input 8
• A7: Address Input 7
• A6: Address Input 6
• A5: Address Input 5
• A4: Address Input 4
• A3: Address Input 3
• A2: Address Input 2
• A1: Address Input 1
• A0: Address Input 0
• DQ0-DQ7: Data Input/Output
• CE: Chip Enable
• OE: Output Enable
• WE: Write Enable
• VCC: Positive Power Supply
• GND: Ground
• NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DS1245Y-100 NV SRAM IC for a visual representation.

Key Features

• Non-Volatile Data Storage: The DS1245Y-100 retains data without the need for a continuous power supply, ensuring data integrity in case of power loss.
• High-Speed Access: With a 100ns access time, this NV SRAM provides fast read and write operations for demanding applications.
• Extended Data Retention: The 10-year minimum data retention period ensures long-term storage of critical information.
• Industrial Temperature Range: Operates over a wide industrial temperature range, making it suitable for rugged environments.
• Single 5V Power Supply: Supports operation with a single +5V power supply, simplifying system design.

Note: For detailed technical specifications, please refer to the DS1245Y-100 datasheet.

Application

• Data Logging: Ideal for data logging applications where non-volatile storage is required.
• Embedded Systems: Suitable for embedded systems that need to store configuration or calibration data.
• Battery Backup Systems: Used in battery backup systems to retain critical information during power outages.

Functionality

The DS1245Y-100 NV SRAM combines the benefits of high-performance static RAM with non-volatile storage, offering reliable data retention and fast access times for a variety of applications.

Usage Guide

• Power Supply: Connect VCC (Pin 23) to the +5V power supply and GND (Pin 22) to the ground.
• Data I/O: Utilize the DQ0-DQ7 pins for data input and output operations.
• Control Signals: Manage the CE (Chip Enable), OE (Output Enable), and WE (Write Enable) pins for read and write operations.

Frequently Asked Questions

Q: What is the data retention period of the DS1245Y-100?
A: The DS1245Y-100 offers a minimum data retention period of 10 years, ensuring long-term storage of data.

Q: Can the DS1245Y-100 operate in rugged industrial environments?
A: Yes, the DS1245Y-100 is designed to operate over a wide industrial temperature range, making it suitable for rugged industrial applications.