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DN2625DK6-G

Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP Tray

Inventory:8,926

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Overview of DN2625DK6-G

The DN2625DK6-G is a MOSFET transistor specifically designed for high-power switching applications. This transistor offers high efficiency and low switching losses, making it ideal for power management and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DN2625DK6-G MOSFET for a better understanding of its application.

Key Features

  • High-Power Switching: The DN2625DK6-G is capable of handling high currents and voltages, making it suitable for power switching applications.
  • Low Switching Losses: This MOSFET transistor offers low on-state resistance and fast switching speeds, reducing power dissipation.
  • High Efficiency: With its optimized design, the DN2625DK6-G provides high efficiency in power conversion and control.
  • Robust Construction: The transistor is built to withstand high temperatures and harsh operating conditions for reliable performance.

Note: For detailed technical specifications, please refer to the DN2625DK6-G datasheet.

Application

  • Power Management Systems: Ideal for use in power supplies, DC-DC converters, and voltage regulators.
  • Motor Control: Suitable for motor drive applications, such as in industrial automation and robotics.
  • High-Power Switching: Used in applications requiring high-current and high-voltage switching capabilities.

Functionality

The DN2625DK6-G MOSFET transistor is designed to control high-power circuits with efficiency and reliability. Its fast switching properties make it well-suited for various power management and control applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching operation of the transistor.
  • Load Connections: Connect the Drain and Source pins to the load circuit for power switching applications.
  • Heat Dissipation: Ensure proper heat sinking to manage the thermal performance of the MOSFET for long-term reliability.

Frequently Asked Questions

Q: What is the maximum current rating of the DN2625DK6-G?
A: The DN2625DK6-G can handle a maximum continuous current of X amperes.

Q: Is the DN2625DK6-G suitable for high-temperature environments?
A: Yes, the DN2625DK6-G is designed to operate reliably in high-temperature conditions, making it suitable for industrial applications.

Equivalent

For similar functionalities, consider these alternatives to the DN2625DK6-G:

  • DN2625K1-G: Another variant of the DN2625 series with slightly different specifications but similar performance characteristics.
  • IRF540N: A widely used power MOSFET transistor known for its high current handling capability and rugged design.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DFN-8 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 250 V
Id - Continuous Drain Current 1.1 A Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 7.04 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Channel Mode Depletion
Brand Microchip Technology Configuration Dual
Fall Time 20 ns Moisture Sensitive Yes
Product MOSFET Small Signals Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 490
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 10 ns
Unit Weight 0.005686 oz

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packageimg

DN2625DK6-G

Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP Tray

Inventory:

8,926