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DN2540N3-G

Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag

Inventory:7,007

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Overview of DN2540N3-G

The DN2540N3-G is a n-channel depletion mode MOSFET designed for high-performance switching applications. This MOSFET features a low on-resistance and high current capability, making it ideal for power management and voltage regulation tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input control terminal
  • Source (S): Current source terminal
  • Drain (D): Output terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DN2540N3-G MOSFET for a visual representation.

Key Features

  • N-Channel Depletion Mode: The DN2540N3-G operates in the depletion mode, allowing for easy control of current flow.
  • Low On-Resistance: This MOSFET offers low on-resistance for efficient power management and reduced heat dissipation.
  • High Current Capability: With its high current-carrying capacity, the DN2540N3-G is suitable for applications requiring high power handling.
  • Wide Voltage Range: Operates in a wide voltage range, making it versatile for various voltage regulation tasks.
  • Enhanced Thermal Performance: The DN2540N3-G is designed for enhanced thermal conductivity to ensure stable operation under load.

Note: For detailed technical specifications, please refer to the DN2540N3-G datasheet.

Application

  • Power Management: Ideal for power management applications requiring efficient switching and voltage regulation.
  • Voltage Regulation: Suitable for use in voltage regulation circuits to maintain stable output voltages.
  • Switching Circuits: Used in high-performance switching circuits for controlling current flow in various electronic systems.

Functionality

The DN2540N3-G is a high-performance n-channel depletion mode MOSFET that provides low on-resistance and high current capability, making it a reliable choice for power management and voltage regulation applications.

Usage Guide

  • Gate Control: Apply the control signals to the Gate (G) terminal to regulate the current flow between the Source (S) and Drain (D).
  • Current Handling: Ensure that the MOSFET's current rating is not exceeded to prevent overheating and damage.
  • Voltage Regulation: Connect the Source (S) and Drain (D) pins in the appropriate circuit configuration for voltage regulation tasks.

Frequently Asked Questions

Q: Can the DN2540N3-G be used for PWM applications?
A: Yes, the DN2540N3-G is suitable for Pulse Width Modulation (PWM) applications requiring efficient current control.

Equivalent

For similar functionalities, consider these alternatives to the DN2540N3-G:

  • DN2540N5: Another n-channel depletion mode MOSFET with similar characteristics and performance.
  • IRF9540N: This MOSFET from Infineon offers comparable features to the DN2540N3-G for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 120 mA Rds On - Drain-Source Resistance 25 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Depletion
Brand Microchip Technology Configuration Single
Fall Time 20 ns Height 5.33 mm
Length 5.21 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Width 4.19 mm
Unit Weight 0.016000 oz

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packageimg

DN2540N3-G

Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag

Inventory:

7,007