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DN2530N3-G

Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag

Inventory:5,335

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Overview of DN2530N3-G

The DN2530N3-G is a MOSFET optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.

Pinout

The DN2530N3-G pinout refers to the configuration and function of each pin in its TO-92 (TO-226) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the DN2530N3-G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-Channel 300 V: The DN2530N3-G is designed with an N-channel structure, allowing it to handle high voltage applications up to 300V.
  • 175mA (Tj) Current Rating: This MOSFET has a current rating of 175mA at a junction temperature of Tj.
  • 740mW (Ta) Power Dissipation: The DN2530N3-G can dissipate up to 740mW of power at an ambient temperature of Ta.
  • Through Hole TO-92 (TO-226) Package: This MOSFET is packaged in a through hole TO-92 (TO-226) package, making it easy to integrate into various circuits.

Applications

  • Sustainable Energy Harvesting: The DN2530N3-G can be used for sustainable energy harvesting applications where high-speed and low-voltage operations are required.
  • Smart Power Management System: This MOSFET is suitable for smart power management systems that require precise control over voltage and current levels.
  • High-Efficiency Conversion Rate: The DN2530N3-G can be used to achieve high-efficiency conversion rates in various applications such as DC-DC converters and motor drives.
  • Limited Electromagnetic Interference (EMI): This MOSFET is designed to minimize EMI, making it suitable for applications where electromagnetic interference needs to be limited.

Equivalents

The DN2530N3-G has the following equivalents:

  • STP16NF06L: The STP16NF06L is a similar MOSFET from STMicroelectronics that offers similar performance characteristics to the DN2530N3-G.
  • FQP50N06L: The FQP50N06L is another equivalent MOSFET from Fairchild Semiconductor that offers similar performance characteristics to the DN2530N3-G.

Frequently Asked Questions

Q: What is the maximum voltage rating of the DN2530N3-G?
A: The maximum voltage rating of the DN2530N3-G is 300V.

Q: What is the current rating of the DN2530N3-G at a junction temperature of Tj?
A: The current rating of the DN2530N3-G at a junction temperature of Tj is 175mA.

Q: Can the DN2530N3-G be used for high-power applications?
A: No, the DN2530N3-G is designed for low-power applications and may not be suitable for high-power applications where higher current ratings are required.

Q: Is the DN2530N3-G fully RoHS compliant?
A: Yes, the DN2530N3-G is fully compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in environmentally friendly applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid DN2530N3-G Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 42 Weeks Samacsys Manufacturer Microchip
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 0.175 A Drain-source On Resistance-Max 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-92 JESD-30 Code O-PBCY-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape ROUND
Package Style CYLINDRICAL Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.74 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON

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packageimg

DN2530N3-G

Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag

Inventory:

5,335