DN2530N3-G
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Inventory:5,335
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Part Number : DN2530N3-G
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Package/Case : TO-92-3
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Manufacturer : MICROCHIP
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Components Classification : Single FETs, MOSFETs
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Datesheet : DN2530N3-G DataSheet (PDF)
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Series : DN2530
Overview of DN2530N3-G
The DN2530N3-G is a MOSFET optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.
Pinout
The DN2530N3-G pinout refers to the configuration and function of each pin in its TO-92 (TO-226) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the DN2530N3-G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
Features
- N-Channel 300 V: The DN2530N3-G is designed with an N-channel structure, allowing it to handle high voltage applications up to 300V.
- 175mA (Tj) Current Rating: This MOSFET has a current rating of 175mA at a junction temperature of Tj.
- 740mW (Ta) Power Dissipation: The DN2530N3-G can dissipate up to 740mW of power at an ambient temperature of Ta.
- Through Hole TO-92 (TO-226) Package: This MOSFET is packaged in a through hole TO-92 (TO-226) package, making it easy to integrate into various circuits.
Applications
- Sustainable Energy Harvesting: The DN2530N3-G can be used for sustainable energy harvesting applications where high-speed and low-voltage operations are required.
- Smart Power Management System: This MOSFET is suitable for smart power management systems that require precise control over voltage and current levels.
- High-Efficiency Conversion Rate: The DN2530N3-G can be used to achieve high-efficiency conversion rates in various applications such as DC-DC converters and motor drives.
- Limited Electromagnetic Interference (EMI): This MOSFET is designed to minimize EMI, making it suitable for applications where electromagnetic interference needs to be limited.
Equivalents
The DN2530N3-G has the following equivalents:
- STP16NF06L: The STP16NF06L is a similar MOSFET from STMicroelectronics that offers similar performance characteristics to the DN2530N3-G.
- FQP50N06L: The FQP50N06L is another equivalent MOSFET from Fairchild Semiconductor that offers similar performance characteristics to the DN2530N3-G.
Frequently Asked Questions
Q: What is the maximum voltage rating of the DN2530N3-G?
A: The maximum voltage rating of the DN2530N3-G is 300V.
Q: What is the current rating of the DN2530N3-G at a junction temperature of Tj?
A: The current rating of the DN2530N3-G at a junction temperature of Tj is 175mA.
Q: Can the DN2530N3-G be used for high-power applications?
A: No, the DN2530N3-G is designed for low-power applications and may not be suitable for high-power applications where higher current ratings are required.
Q: Is the DN2530N3-G fully RoHS compliant?
A: Yes, the DN2530N3-G is fully compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in environmentally friendly applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | DN2530N3-G | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | MICROCHIP TECHNOLOGY INC |
Package Description | GREEN PACKAGE-3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Factory Lead Time | 42 Weeks | Samacsys Manufacturer | Microchip |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 300 V |
Drain Current-Max (ID) | 0.175 A | Drain-source On Resistance-Max | 12 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 5 pF |
JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | DEPLETION MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | ROUND |
Package Style | CYLINDRICAL | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.74 W | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | BOTTOM |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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DN2530N3-G
Trans MOSFET N-CH Si 300V 0.175A 3-Pin TO-92 Bag
Inventory:
5,335
Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
Shipping
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How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.




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