• DMP6023LE-13 SOT-223-3
DMP6023LE-13 SOT-223-3


MOSFET P-CH 60V 7A/18.2A SOT223


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Overview of DMP6023LE-13

Description: The DMP6023LE-13 is a discrete semiconductor product from Diodes Incorporated. It is a single transistor with an SOT-223-4 package and a silicon technology.Features:- Vgs-Gate-Source-Voltage of +/- 20 V- Vgs-th-Gate-Source-Threshold-Voltage of - 3 V- Typical-Turn-Off-Delay-Time of 110 ns- Fall-Time of 62 ns- Pd-Power-Dissipation of 2 W- Unit-Weight of 0.006632 ozApplications: The DMP6023LE-13 is suitable for use in applications such as power management, motor control, and switching. It can be used in a variety of electronic devices such as computers, cell phones, and other consumer electronics.


Key Features

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability


Diodes Incorporated Inventory


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Diodes Incorporated
Series - Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.1 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2569 pF @ 30 V FET Feature -
Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA

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Warranty, Returns, and Additional Information

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