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DMN65D8L-7

Transistor MOSFET N channel 60V 0.31A SOT-23

Quantity Unit Price(USD) Ext. Price
21000 $0.014 $294.00
9000 $0.015 $135.00
3000 $0.016 $48.00
600 $0.017 $10.20
200 $0.020 $4.00
20 $0.024 $0.48

Inventory:5,768

*The price is for reference only.
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Overview of DMN65D8L-7

The DMN65D8L-7 is an N-channel enhancement mode MOSFET designed for high-frequency, high-efficiency power supply applications. It features low on-state resistance and superior switching performance, making it ideal for use in high-speed switching power supplies and DC-DC converters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for the MOSFET gate voltage
  • Drain (D): Terminal connected to the power supply or load

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN65D8L-7 MOSFET for a visual representation.

Key Features

  • High-Frequency Operation: Suitable for high-frequency switching applications.
  • Low On-State Resistance: Minimizes conduction losses during operation.
  • Enhancement Mode Design: Allows for easy and efficient gate control.
  • Superior Switching Performance: Enables fast and efficient switching transitions.
  • High Efficiency: Contributes to improved overall power supply efficiency.

Note: For detailed technical specifications, please refer to the DMN65D8L-7 datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-speed switching power supply designs.
  • DC-DC Converters: Suitable for high-efficiency and high-frequency DC-DC converter circuits.
  • Motor Drive Circuits: Can be used in motor drive applications for efficient power delivery.

Functionality

The DMN65D8L-7 is an N-channel enhancement mode MOSFET designed to provide efficient and high-frequency switching for power supply and power management applications.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to control the switching operation.
  • Load Connection: Connect the load or power supply to the drain terminal (D).
  • Ground Connection: Connect the source terminal (S) to the ground or common reference.

Frequently Asked Questions

Q: Is the DMN65D8L-7 suitable for low-power applications?
A: Yes, the DMN65D8L-7's low on-state resistance and high efficiency make it suitable for low-power as well as high-power applications.

Equivalent

For similar functionalities, consider these alternatives to the DMN65D8L-7:

  • DMN3018SSD-13: This is another N-channel MOSFET designed for high-frequency and high-efficiency applications, providing comparable performance to the DMN65D8L-7.
  • AON6220: An N-channel MOSFET with similar characteristics suitable for high-frequency power supply and converter designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 310 mA Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 870 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 540 mW
Channel Mode Enhancement Series DMN63
Brand Diodes Incorporated Configuration Single
Fall Time 7.3 ns Forward Transconductance - Min 80 mS
Product Type MOSFET Rise Time 2.8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 12.6 ns
Typical Turn-On Delay Time 2.7 ns Unit Weight 0.000282 oz

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DMN65D8L-7

Transistor MOSFET N channel 60V 0.31A SOT-23

Inventory:

5,768