• DMN63D8LW-13


Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS


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Overview of DMN63D8LW-13

The DMN63D8LW-13 is a N-channel MOSFET transistor featuring a low on-resistance and high-speed switching capability. It is designed for use in a variety of power management and switching applications where efficiency and performance are critical.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • Vcc: Power supply
  • GND: Ground connection
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN63D8LW-13 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The DMN63D8LW-13 offers a low on-resistance, minimizing power losses and improving efficiency in power management applications.
  • High-Speed Switching: This MOSFET transistor provides fast switching speeds, making it suitable for applications requiring rapid on/off transitions.
  • High Power Handling: With its robust design, the DMN63D8LW-13 can handle high power levels, enabling it to be used in power distribution systems.
  • Wide Operating Voltage Range: Operates within a broad voltage range, making it versatile for various power electronics applications.
  • Enhanced Thermal Performance: Designed for optimal thermal dissipation, ensuring reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the DMN63D8LW-13 datasheet.


  • Power Management: Ideal for power distribution, voltage regulation, and load switching in electronic circuits.
  • Motor Control: Suitable for motor control applications where high-speed switching and efficient power handling are required.
  • Switching Power Supplies: Used in switching power supply designs to control the flow of power with minimal losses.


The DMN63D8LW-13 MOSFET transistor is a high-performance component that facilitates efficient power management and fast switching in various electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal (G) to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain terminal (D) and source terminal (S) to the respective power and ground connections in the circuit.
  • Thermal Considerations: Ensure proper heat sinking or thermal management to maintain optimal operating temperatures.

Frequently Asked Questions

Q: Is the DMN63D8LW-13 suitable for high-frequency applications?
A: Yes, the high-speed switching capability of the DMN63D8LW-13 makes it suitable for high-frequency applications requiring fast response times.


For similar functionalities, consider these alternatives to the DMN63D8LW-13:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for power management applications.
  • NTD5867NL: This N-channel MOSFET offers similar power handling and switching speeds to the DMN63D8LW-13.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 380 mA Rds On - Drain-Source Resistance 2.8 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 900 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 420 mW
Channel Mode Enhancement Series DMN63
Brand Diodes Incorporated Configuration Single
Fall Time 16.7 ns Forward Transconductance - Min 80 mS
Product Type MOSFET Rise Time 3.9 ns
Factory Pack Quantity 10000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 11.4 ns
Typical Turn-On Delay Time 2.3 ns Unit Weight 0.000212 oz

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