• DMN63D8LW-13
DMN63D8LW-13

DMN63D8LW-13

Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS

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Overview of DMN63D8LW-13

The DMN63D8LW-13 is a N-channel MOSFET transistor featuring a low on-resistance and high-speed switching capability. It is designed for use in a variety of power management and switching applications where efficiency and performance are critical.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • Vcc: Power supply
  • GND: Ground connection
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN63D8LW-13 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The DMN63D8LW-13 offers a low on-resistance, minimizing power losses and improving efficiency in power management applications.
  • High-Speed Switching: This MOSFET transistor provides fast switching speeds, making it suitable for applications requiring rapid on/off transitions.
  • High Power Handling: With its robust design, the DMN63D8LW-13 can handle high power levels, enabling it to be used in power distribution systems.
  • Wide Operating Voltage Range: Operates within a broad voltage range, making it versatile for various power electronics applications.
  • Enhanced Thermal Performance: Designed for optimal thermal dissipation, ensuring reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the DMN63D8LW-13 datasheet.

Application

  • Power Management: Ideal for power distribution, voltage regulation, and load switching in electronic circuits.
  • Motor Control: Suitable for motor control applications where high-speed switching and efficient power handling are required.
  • Switching Power Supplies: Used in switching power supply designs to control the flow of power with minimal losses.

Functionality

The DMN63D8LW-13 MOSFET transistor is a high-performance component that facilitates efficient power management and fast switching in various electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal (G) to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain terminal (D) and source terminal (S) to the respective power and ground connections in the circuit.
  • Thermal Considerations: Ensure proper heat sinking or thermal management to maintain optimal operating temperatures.

Frequently Asked Questions

Q: Is the DMN63D8LW-13 suitable for high-frequency applications?
A: Yes, the high-speed switching capability of the DMN63D8LW-13 makes it suitable for high-frequency applications requiring fast response times.

Equivalent

For similar functionalities, consider these alternatives to the DMN63D8LW-13:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for power management applications.
  • NTD5867NL: This N-channel MOSFET offers similar power handling and switching speeds to the DMN63D8LW-13.

DMN63D8LW-13

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 380 mA Rds On - Drain-Source Resistance 2.8 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 900 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 420 mW
Channel Mode Enhancement Series DMN63
Brand Diodes Incorporated Configuration Single
Fall Time 16.7 ns Forward Transconductance - Min 80 mS
Product Type MOSFET Rise Time 3.9 ns
Factory Pack Quantity 10000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 11.4 ns
Typical Turn-On Delay Time 2.3 ns Unit Weight 0.000212 oz

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