• DMN62D0U-13 SOT23-3
DMN62D0U-13 SOT23-3


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A

Quantity Unit Price(USD) Ext. Price
10 $0.053 $0.53
100 $0.047 $4.70
300 $0.045 $13.50
1000 $0.043 $43.00
5000 $0.033 $165.00
10000 $0.032 $320.00


*The price is for reference only.
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Overview of DMN62D0U-13

The DMN62D0U-13 is a dual N-channel enhancement mode MOSFET designed for power management applications in electronic circuits. This MOSFET features a low on-state resistance and high-speed switching capabilities, making it ideal for high-efficiency power conversion and motor control applications.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN62D0U-13 MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs in a single package for enhanced power management.
  • Low On-State Resistance: The DMN62D0U-13 offers low RDS(ON) for reduced power losses and improved efficiency.
  • High-Speed Switching: Enables fast switching transitions, making it suitable for high-frequency applications.
  • Enhancement Mode Design: Features enhancement-mode operation for easy integration into various circuit designs.
  • High Temperature Performance: Designed to operate reliably at elevated temperatures for industrial and automotive applications.

Note: For detailed technical specifications, please refer to the DMN62D0U-13 datasheet.


  • Power Management: Ideal for power management applications such as voltage regulation and load switching.
  • Motor Control: Suitable for motor control circuits in robotics, automation, and automotive systems.
  • DC-DC Converters: Used in DC-DC converter circuits for efficient power conversion.


The DMN62D0U-13 dual N-channel MOSFET facilitates efficient power management and high-speed switching in electronic circuits. Its low on-state resistance and dual-channel design make it a versatile component for various power applications.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate terminal to control the conduction of the MOSFET channels.
  • Load Connection: Connect the load between the drain and source terminals for power switching operations.
  • Heat Dissipation: Ensure proper thermal management due to the MOSFET's high temperature performance capabilities.

Frequently Asked Questions

Q: Is the DMN62D0U-13 suitable for high-frequency switching applications?
A: Yes, the DMN62D0U-13's high-speed switching capabilities make it suitable for high-frequency applications requiring fast response times.


For similar functionalities, consider these alternatives to the DMN62D0U-13:

  • DMN63D0U-13: A similar dual N-channel MOSFET with slightly different specifications and characteristics.
  • DMN64D0U-13: Another dual N-channel MOSFET option that offers comparable performance to the DMN62D0U-13.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 380 mA Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 500 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 380 mW
Channel Mode Enhancement Series DMN62D0U
Brand Diodes Incorporated Configuration Single
Fall Time 12.5 ns Forward Transconductance - Min 1.8 mS
Product Type MOSFET Rise Time 2.5 ns
Factory Pack Quantity 10000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 22.6 ns
Typical Turn-On Delay Time 2.4 ns Unit Weight 0.000282 oz

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