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DMN60H080DS-7

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Quantity Unit Price(USD) Ext. Price
5 $0.079 $0.40
50 $0.077 $3.85
150 $0.076 $11.40
500 $0.074 $37.00

Inventory:6,672

*The price is for reference only.
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Overview of DMN60H080DS-7

The DMN60H080DS-7 is a high-speed N-channel enhancement mode power MOSFET designed for use in power management applications.This MOSFET offers low on-state resistance and fast switching characteristics,making it ideal for high-frequency switching circuits and power supplies.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Control terminal for turning the MOSFET on and off.
  • Drain:Current carrying terminal where the output voltage is taken.
  • Source:Ground reference terminal.
  • NC:No Connection.
  • NC:No Connection.
  • NC:No Connection.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN60H080DS-7 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The DMN60H080DS-7 offers fast switching capabilities, suitable for high-frequency applications.
  • Low On-State Resistance: With low RDS(ON), this MOSFET minimizes power losses and improves efficiency in power circuits.
  • Enhancement Mode Design: The enhancement mode operation allows for easy control of the MOSFET with a positive voltage at the gate.
  • High Power Handling Capacity: This MOSFET can handle high power levels, making it suitable for power management applications.

Note: For detailed technical specifications, please refer to the DMN60H080DS-7 datasheet.

Application

  • High-Frequency Switching Circuits: Ideal for use in circuits requiring fast switching speeds and high efficiency.
  • Power Supplies: Suitable for power supply applications where low on-state resistance is essential for minimizing losses.
  • Motor Control: Can be used in motor control systems where high power handling capabilities are required.

Functionality

The DMN60H080DS-7 is a high-speed power MOSFET that enables efficient switching and power management in various electronic applications.Its low on-state resistance and high-speed characteristics make it a reliable component for power circuit designs.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to turn the MOSFET on and off for controlling power flow.
  • Connections: Connect the drain terminal to the load, the source terminal to ground, and control the switching using the gate terminal.
  • Heat Management: Ensure proper heat sinking to maintain the MOSFET within its safe operating temperature range.

Frequently Asked Questions

Q: Is the DMN60H080DS-7 suitable for high-frequency PWM applications?
A: Yes, the DMN60H080DS-7's high-speed switching characteristics make it suitable for high-frequency PWM applications requiring efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the DMN60H080DS-7:

  • DMN65H080Q: This MOSFET offers comparable performance with slight variations in specifications, suitable for similar power management applications.
  • DMN70H080S: A high-speed power MOSFET with enhanced features, providing efficient power handling capabilities for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 80 mA Rds On - Drain-Source Resistance 100 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 1.7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.1 W
Channel Mode Enhancement Brand Diodes Incorporated
Configuration Single Fall Time 158 ns
Forward Transconductance - Min 76 mS Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 7 ns
Unit Weight 0.000282 oz

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DMN60H080DS-7

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Inventory:

6,672