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DMN3190LDW-7

Green Plastic Package-6

Quantity Unit Price(USD) Ext. Price
5 $0.069 $0.34
50 $0.056 $2.80
150 $0.049 $7.35
500 $0.044 $22.00
3000 $0.039 $117.00
6000 $0.037 $222.00

Inventory:4,560

*The price is for reference only.
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Overview of DMN3190LDW-7

The DMN3190LDW-7 is a logic-level N-channel MOSFET transistor designed for use in power management and switching applications. This MOSFET features a low threshold voltage and high-speed switching capabilities, making it suitable for various electronic circuits requiring efficient power control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body (Connected to Source)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN3190LDW-7 MOSFET for a visual representation.

Key Features

  • Logic-Level Drive: The DMN3190LDW-7 can be fully enhanced with logic-level voltages, simplifying its control in digital circuits.
  • Low On-Resistance: This MOSFET offers low on-resistance, resulting in minimal power dissipation and high efficiency in switching applications.
  • Fast Switching Speed: With high-speed switching characteristics, the DMN3190LDW-7 can quickly transition between on and off states in power management systems.
  • Low Threshold Voltage: The low threshold voltage of this MOSFET allows it to be easily driven by logic-level signals, ensuring efficient operation in various circuit designs.

Note: For detailed technical specifications, please refer to the DMN3190LDW-7 datasheet.

Application

  • Switching Circuits: Ideal for use in switching circuits for power control and management.
  • Motor Control: Suitable for driving small to medium-sized motors in electronic applications.
  • Voltage Regulation: Can be utilized in voltage regulation circuits to efficiently control output voltages.

Functionality

The DMN3190LDW-7 N-channel MOSFET transistor provides efficient power switching capabilities with its low on-resistance and logic-level drive requirement. It is a reliable component for power management and control in various electronic systems.

Usage Guide

  • Gate Drive: Apply logic-level voltages to the Gate pin to control the ON/OFF state of the MOSFET.
  • Load Connection: Connect the Load to the Drain pin for effective power switching.
  • Source Connection: Connect the Source pin to the ground reference of the circuit.

Frequently Asked Questions

Q: What is the maximum drain current rating of the DMN3190LDW-7?
A: The DMN3190LDW-7 can handle a maximum drain current of X amperes under specified conditions.

Q: Is the DMN3190LDW-7 suitable for PWM applications?
A: Yes, the DMN3190LDW-7's fast switching speed makes it suitable for use in Pulse Width Modulation (PWM) applications.

Equivalent

For similar functionalities, consider these alternatives to the DMN3190LDW-7:

  • IRFZ44N: An N-channel MOSFET with comparable specifications and performance characteristics to the DMN3190LDW-7.
  • BSP149: This logic-level N-channel MOSFET offers similar features and can be used as a replacement for the DMN3190LDW-7 in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1 A Rds On - Drain-Source Resistance 190 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 400 mW
Channel Mode Enhancement Series DMN3190
Brand Diodes Incorporated Configuration Dual
Fall Time 15.6 ns Forward Transconductance - Min 0.7 mS
Product Type MOSFET Rise Time 8.9 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 30.3 ns
Typical Turn-On Delay Time 4.5 ns Unit Weight 0.000265 oz

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