• DMN3051L-7 SOT23-3
DMN3051L-7 SOT23-3

DMN3051L-7

Diodes Inc DMN3051L-7 N-channel MOSFET Transistor, 5.8 A, 30 V, 3-Pin SOT-23

Quantity Unit Price(USD) Ext. Price
6000 $0.054 $324.00
3000 $0.056 $168.00
500 $0.070 $35.00
150 $0.074 $11.10
50 $0.079 $3.95
5 $0.090 $0.45

Inventory:3,853

*The price is for reference only.
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Overview of DMN3051L-7

The DMN3051L-7 is an N-Channel Enhancement MOSFET optimized for [fast switching speed, low power consumption]. It provides excellent performance for high-frequency applications where power efficiency and signal integrity are crucial.

Pinout

The DMN3051L-7 pinout refers to the configuration and function of each pin in its SOT-23 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the DMN3051L-7 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-Channel Enhancement MOSFET: This feature provides superior switching speed and efficiency for high-frequency applications
  • SOT-23 Package: The compact package ensures easy integration into small-footprint designs
  • High-Speed Operation: Fast switching speeds enable high-frequency signal processing with low power consumption
  • Low Power Consumption: Minimized energy usage reduces heat generation and extends component lifespan
  • Optimized for Digital Signal Processing: DMN3051L-7 is designed to work seamlessly in digital systems where high-speed switching is crucial

Applications

  • Digital Signal Processing: The DMN3051L-7 excels as a switch for digital signal processing in audio, video, and communication applications where high-frequency signals require low power consumption and precise control
  • High-Speed Data Acquisition Systems: This MOSFET serves as an excellent high-speed switch for data acquisition systems requiring fast sampling and precise control over signal lines
  • Industrial Control Circuits: The DMN3051L-7 is suitable for use in industrial control circuits where reliable switching and power efficiency are essential
  • Rapid Prototyping and Development: This component can be used effectively in rapid prototyping to quickly test and validate design concepts before moving production

Advantages and Disadvantages

Advantages

  • Fast Switching Speeds: Enables high-frequency signal processing with low power consumption
  • High-Quality Construction: The SOT-23 package ensures reliable operation and long lifespan in a compact footprint
  • Easy Integration: The DMN3051L-7 is designed for seamless integration into digital systems, minimizing design complexity and ease of use

Disadvantages

  • Tight Pin Spacing May Pose a Challenge: The compact SOT-23 package requires precise pin manipulation during assembly or soldering, which can be difficult for novice users

Equivalents

For similar functionalities, consider these alternatives to the DMN3051L-7:

  • Beta=50 MOSFET: Other N-channel enhancement MOSFETS with high gain and switching speeds
  • Fine-Pitch QFN MOSFETs: Alternative package options for high-performance applications demanding compact form factors

DMN3051L-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Diodes Incorporated
Series - Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 424 pF @ 5 V
FET Feature - Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN3051

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DMN3051L-7

Diodes Inc DMN3051L-7 N-channel MOSFET Transistor, 5.8 A, 30 V, 3-Pin SOT-23

Inventory:

3,853