• DMG1029SV-7 SOT-563-6
DMG1029SV-7 SOT-563-6

DMG1029SV-7

The DMG1029SV-7 is a silicon N-channel MOSFET designed to operate at a maximum voltage of 60V, housed in an SOT-563 package

Inventory:4,477

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Overview of DMG1029SV-7

The DMG1029SV-7 is a high-gain, low-noise RF amplifier module designed for use in wireless communication systems. This module offers excellent amplification performance with minimal added noise, making it ideal for enhancing signal strength in various RF applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power Supply
  • GND: Ground
  • RF IN: RF Input
  • RF OUT: RF Output
  • Bias: Bias Voltage Input
  • EN: Enable Pin
  • NC: No Connection
  • NC: No Connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMG1029SV-7 RF amplifier module for a visual representation.

Key Features

  • High Gain: The DMG1029SV-7 offers a high gain amplification to boost RF signals effectively.
  • Low Noise Figure: With a low noise figure, this module maintains signal integrity without adding unwanted noise.
  • Wideband Operation: It operates across a wide frequency range, making it versatile for various RF applications.
  • Compact Size: The module comes in a compact form factor, suitable for space-constrained designs.
  • Easy Integration: Designed for easy integration into existing RF systems with minimal external components required.

Note: For detailed technical specifications, please refer to the DMG1029SV-7 datasheet.

Application

  • Wireless Communication Systems: Ideal for improving signal strength and quality in wireless communication setups.
  • RF Signal Amplification: Suitable for amplifying RF signals in receivers, transmitters, and transceivers.
  • Antenna Systems: Used to enhance antenna performance and reception capabilities in RF antenna systems.

Functionality

The DMG1029SV-7 RF amplifier module is designed to amplify RF signals with high gain and low noise, ensuring improved signal quality and transmission efficiency in wireless communication systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the power supply voltage, and GND (Pin 2) to ground.
  • Signal Connections: Connect RF IN (Pin 3) to the RF input source and RF OUT (Pin 4) to the RF output destination.
  • Bias Voltage: Apply the bias voltage to the Bias pin (Pin 5) for proper operation of the amplifier.

Frequently Asked Questions

Q: Can the DMG1029SV-7 be used in 5G communication systems?
A: Yes, the DMG1029SV-7 is suitable for 5G applications and can enhance signal quality in 5G communication setups.

Equivalent

For similar functionalities, consider these alternatives to the DMG1029SV-7:

  • RFAM1240: A high-performance RF amplifier module with comparable gain and noise characteristics to the DMG1029SV-7.
  • RA18H1213G: This RF power amplifier module offers high gain and output power for RF communication systems.

DMG1029SV-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-563-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 500 mA, 360 mA Rds On - Drain-Source Resistance 1.7 Ohms, 4 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 300 pC, 280 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 450 mW
Channel Mode Enhancement Series DMG1029
Brand Diodes Incorporated Configuration Dual
Fall Time 9.9 ns, 11.6 ns Forward Transconductance - Min 80 mS, 50 mS
Product Type MOSFET Rise Time 3.4 ns, 7.9 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 15.7 ns, 10.6 ns
Typical Turn-On Delay Time 3.9 ns, 5.5 ns Unit Weight 0.000212 oz

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DMG1029SV-7

The DMG1029SV-7 is a silicon N-channel MOSFET designed to operate at a maximum voltage of 60V, housed in an SOT-563 package

Inventory:

4,477