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CY7C1061AV33-10ZXI

Cypress Semiconductor CY7C1061AV33-10ZXI SRAM Memory

Inventory:6,730

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Overview of CY7C1061AV33-10ZXI

The CY7C1061AV33-10ZXI is a high-performance synchronous SRAM designed for use in high-speed networking, telecommunications, and industrial control systems. It features a 3.3V operation and offers a fast access time, making it suitable for demanding memory applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • GND: Ground
  • CLK: Clock input
  • CE: Chip enable
  • OE: Output enable
  • UB, LB: Upper byte and lower byte data input/output
  • Address Inputs: Address inputs for memory access

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY7C1061AV33-10ZXI SRAM for a visual representation.

Key Features

  • High Performance: The CY7C1061AV33-10ZXI provides high-speed access and reliable operation in demanding applications.
  • 3.3V Operation: Designed for operation at a 3.3V power supply voltage, compatible with various systems and interfaces.
  • Synchronous Operation: Offers synchronous data transfer, ensuring accurate and efficient communication with the memory device.
  • Fast Access Time: Features a fast access time, suitable for high-speed applications that require rapid data retrieval.
  • Industrial Grade: Built to meet the rigorous demands of industrial environments, ensuring reliability and durability.

Note: For detailed technical specifications, please refer to the CY7C1061AV33-10ZXI datasheet.

Application

  • Networking Systems: Ideal for use in high-speed networking equipment, providing reliable memory storage and retrieval.
  • Telecommunications: Suitable for telecommunications systems requiring high-performance memory solutions.
  • Industrial Control: Used in industrial control systems for storing critical operational data and configurations.

Functionality

The CY7C1061AV33-10ZXI is a high-speed, 3.3V synchronous SRAM designed to provide fast and reliable data storage and retrieval in various applications.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) and GND (Pin 2) to the power supply and ground, respectively.
  • Control Inputs: Apply the clock signal to the CLK input (Pin 3) and use CE (Chip Enable) and OE (Output Enable) for control.
  • Data I/O: Use the UB/LB pins for upper byte and lower byte input/output operations.

Frequently Asked Questions

Q: Is the CY7C1061AV33-10ZXI suitable for use in rugged industrial environments?
A: Yes, the CY7C1061AV33-10ZXI is designed for industrial grade applications and can withstand harsh environmental conditions.

Equivalent

For similar functionalities, consider these alternatives to the CY7C1061AV33-10ZXI:

  • AS6C1008-55SIN: This is a synchronous SRAM with a 3.3V operation and comparable performance characteristics to the CY7C1061AV33-10ZXI.
  • MT45W8MW16BGX-708WT: A high-performance synchronous SRAM with 3.3V operation, suitable for high-speed memory applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 16 Mbit Organization 1 M x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 275 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case TSOP-54 Brand Infineon Technologies
Memory Type SDR Moisture Sensitive Yes
Product Type SRAM Series CY7C1061AV33
Factory Pack Quantity 108 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.136546 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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packageimg

CY7C1061AV33-10ZXI

Cypress Semiconductor CY7C1061AV33-10ZXI SRAM Memory

Inventory:

6,730