CY7C1041D-10ZSXI

The CY7C1041D-10ZSXI is a high-speed CMOS static RAM organized as 1,048,576 x 1. It offers fast access times and low power consumption, making it suitable for various memory-intensive applications. This SRAM is designed to provide reliable and efficient data storage in digital systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A0-A19: Address Inputs
• OE: Output Enable
• CE1, CE2: Chip Enable Inputs
• WE: Write Enable
• I/O0-I/O7: Data Input/Output
• Vcc: Power Supply
• GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY7C1041D-10ZSXI SRAM for a visual representation.

Key Features

• High-Speed SRAM: The CY7C1041D-10ZSXI offers rapid access times, suitable for high-performance applications.
• Low Power Consumption: With its CMOS technology, this SRAM consumes minimal power, ideal for energy-efficient systems.
• 1,048,576 x 1 Organization: Provides a total of 1,048,576 memory cells, each storing a single bit of data.
• Wide Operating Voltage Range: Operates within a voltage range of 4.5V to 5.5V, offering flexibility in power supply options.
• Industrial Temperature Range: The CY7C1041D-10ZSXI can withstand industrial temperature ranges, ensuring reliability in harsh environments.

Note: For detailed technical specifications, please refer to the CY7C1041D-10ZSXI datasheet.

Application

• Embedded Systems: Ideal for use in embedded systems that require fast and reliable data storage.
• Communication Equipment: Suitable for buffering and temporary data storage in communication devices.
• Data Acquisition Systems: Used in data acquisition systems for quick and efficient data processing.

Functionality

The CY7C1041D-10ZSXI is a high-speed CMOS SRAM with a 1,048,576 x 1 organization, providing fast and efficient data storage capabilities. It is designed to meet the memory requirements of various digital applications.

Usage Guide

• Power Supply: Connect Vcc (Pin 8) to the power supply voltage (4.5V to 5.5V) and GND (Pin 7) to ground.
• Data Input/Output: Use the I/O pins (I/O0-I/O7) for transferring data to and from the SRAM.
• Control Signals: Utilize the CE, OE, and WE signals to control the operation of the SRAM.

Frequently Asked Questions

Q: What is the access time of the CY7C1041D-10ZSXI SRAM?
A: The CY7C1041D-10ZSXI offers access times as fast as 10ns, ensuring quick retrieval of data.

Q: Can the CY7C1041D-10ZSXI operate in extended temperature environments?
A: Yes, the CY7C1041D-10ZSXI is designed to work reliably across industrial temperature ranges, making it suitable for rugged applications.