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CY62256NLL-70SNXC

Operating voltage range of 4.5V to 5.5V

Quantity Unit Price(USD) Ext. Price
1 $1.270 $1.27
10 $1.074 $10.74
30 $0.966 $28.98
100 $0.844 $84.40
500 $0.790 $395.00
1000 $0.766 $766.00

Inventory:7,862

*The price is for reference only.
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Submit your quote request for CY62256NLL-70SNXC using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of CY62256NLL-70SNXC

The CY62256NLL-70SNXC is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. It features a 70ns access time, making it suitable for high-speed data storage applications in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A14: Address Inputs
  • Q1-Q8: Data Output
  • WE: Write Enable
  • OE: Output Enable
  • CE1, CE2: Chip Enable
  • Vcc: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY62256NLL-70SNXC SRAM for a visual representation.

Key Features

  • High-Performance CMOS Static RAM: Provides fast access time and efficient storage of data.
  • Organization: 32,768 words by 8 bits
  • Access Time: 70ns, suitable for high-speed data storage applications
  • Low Power Consumption: Operates with minimal power requirements
  • Wide Operating Voltage Range: Compatible with various electronic systems
  • Package: Available in compact, space-saving packaging

Note: For detailed technical specifications, please refer to the CY62256NLL-70SNXC datasheet.

Application

  • Embedded Systems: Suitable for use in embedded systems where fast and reliable data storage is required.
  • High-Speed Data Buffering: Ideal for buffering high-speed data in electronic devices and communication systems.
  • Microcontroller Storage: Used for data storage in microcontroller-based applications.

Functionality

The CY62256NLL-70SNXC is a high-performance CMOS static RAM designed for fast and efficient data storage. It provides reliable data access for various electronic applications.

Usage Guide

  • Power Supply: Connect Vcc to the power supply and GND to ground.
  • Memory Access: Use the Address Inputs (A0-A14) for memory addressing and the Control Inputs (WE, OE, CE1, CE2) for memory operations.

Frequently Asked Questions

Q: What is the operating voltage range for CY62256NLL-70SNXC?
A: The operating voltage range is specified in the datasheet to ensure proper functionality of the SRAM.

Q: Can the CY62256NLL-70SNXC be used in battery-powered devices?
A: Yes, the low power consumption of CY62256NLL-70SNXC makes it suitable for battery-powered applications requiring high-speed data storage.

Equivalent

For similar functionalities, consider these alternatives to CY62256NLL-70SNXC:

  • AT28C256: A CMOS low-power static RAM offering comparable performance and storage capacity.
  • IS61LV25616AL: This CMOS SRAM provides similar high-speed data storage capabilities with low power consumption.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 256 kbit Organization 32 k x 8
Access Time 70 ns Interface Type Parallel
Supply Voltage - Max 5.5 V Supply Voltage - Min 4.5 V
Supply Current - Max 50 mA Minimum Operating Temperature 0 C
Maximum Operating Temperature + 70 C Mounting Style SMD/SMT
Package / Case SOIC-28 Brand Infineon Technologies
Data Rate SDR Memory Type SDR
Moisture Sensitive Yes Number of Ports 1
Product Type SRAM Series CY62256NLL
Factory Pack Quantity 540 Subcategory Memory & Data Storage
Tradename MoBL Type Asynchronous
Unit Weight 0.078125 oz

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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CY62256NLL-70SNXC

Operating voltage range of 4.5V to 5.5V

Inventory:

7,862