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CSD88599Q5DCT

RoHS Compliant Gate Drive ICs

Inventory:5,334

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Overview of CSD88599Q5DCT

The CSD88599Q5DCT is a NexFET™ power MOSFET designed for high-efficiency power management applications.It features ultra-low on-resistance and high continuous drain current capability,making it suitable for various power electronics designs.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • VSS:Substrate Connection
  • VS:Bootstrap Supply Voltage
  • COMP:Compensation Connection
  • FREQ:Frequency Synchronization Input
  • VDD:Driver Power Supply
  • RT:Thermal Resistance
  • ISET:Current Sense Input
  • PGND:Power Ground
  • PH:Power High-Side Bootstrap Output
  • VDD:Power Supply Input
  • IN:High-Side Logic Input
  • FLTB:Fault Blanking


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD88599Q5DCT for a visual representation.

Key Features

  • Ultra-Low On-Resistance: The CSD88599Q5DCT offers extremely low on-resistance,which minimizes power losses and improves efficiency in power management circuits.
  • High Continuous Drain Current Capability: With its high current-handling capacity,this MOSFET can handle large continuous currents,meeting the demands of power-intensive applications.
  • High-Speed Switching: The CSD88599Q5DCT provides fast switching times,enabling efficient power control and regulation.
  • Integrated Protection Features: This MOSFET includes built-in protection against overcurrent,overheating,and short-circuit conditions,enhancing system reliability.
  • Compact Package: Available in a compact and thermally efficient package,ideal for space-constrained designs.

Note: For detailed technical specifications,please refer to the CSD88599Q5DCT datasheet.

Application

  • Power Supplies and Converters: The CSD88599Q5DCT is suitable for use in high-efficiency power supplies,voltage regulators,and DC-DC converters.
  • Motor Control: This MOSFET can be utilized in motor control circuits for effective power switching and control.
  • Renewable Energy Systems: It is ideal for applications in solar inverters,wind turbine converters,and other renewable energy systems requiring efficient power management.

Functionality

The CSD88599Q5DCT is a high-performance power MOSFET that enables efficient power switching and control in a wide range of power management applications. It offers low on-resistance,high current capability,and integrated protection features for reliable operation.

Usage Guide

  • Gate Drive: Apply appropriate gate drive voltage to the G (Gate) pin for desired switching behavior.
  • Power Supply: Connect VDD(Pins 6 and 13) to the power supply input,and S (Source) to the load or ground.
  • Control Interface: Utilize the IN (High-Side Logic Input) pin to control the switching operation based on system requirements.

Frequently Asked Questions

Q:Does the CSD88599Q5DCT include protection against overcurrent conditions?
A:Yes, the CSD88599Q5DCT features integrated protection against overcurrent, enhancing its reliability in power management applications.

Equivalent

For similar functionalities, consider these alternatives to the CSD88599Q5DCT:

  • CSD18540Q5B: This power MOSFET from Texas Instruments offers comparable performance and efficiency for power management applications.
  • IRF1405: This power MOSFET from Infineon provides similar high-power handling capabilities and low on-resistance for power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSON-CLIP-22
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 1.7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.4 V Qg - Gate Charge 43 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 12 W Channel Mode Enhancement
Tradename NexFET Series CSD88599Q5DC
Brand Texas Instruments Configuration Dual
Fall Time 3 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 250
Subcategory MOSFETs Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 9 ns Unit Weight 0.003549 oz

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CSD88599Q5DCT

RoHS Compliant Gate Drive ICs

Inventory:

5,334