• CSD88537ND SOP8
CSD88537ND SOP8

CSD88537ND

60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND

Quantity Unit Price(USD) Ext. Price
1 $0.936 $0.94
10 $0.780 $7.80
30 $0.700 $21.00
100 $0.624 $62.40
500 $0.576 $288.00
1000 $0.552 $552.00

Inventory:8,483

*The price is for reference only.
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Submit your quote request for CSD88537ND using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of CSD88537ND

The CSD88537ND is a MOSFET optimized for ultra-low Qg and Qgd, avalanche rated, Pb-free, RoHS compliant, and halogen free operations. It provides excellent performance for various applications that require high-speed and low-voltage switching.

Pinout

The CSD88537ND pinout refers to the configuration and function of each pin in its SOIC-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the CSD88537ND has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Ultra-Low Qg and Qgd: The CSD88537ND features ultra-low gate-to-source capacitance (Qg) and gate-to-drain capacitance (Qgd), making it suitable for high-frequency applications.
  • Avalanche Rated: This MOSFET is designed to withstand avalanche conditions, ensuring reliable operation in harsh environments.
  • Pb Free: The CSD88537ND is free from lead (Pb) content, making it a safe and environmentally friendly choice for electronic designs.
  • RoHS Compliant: This MOSFET complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it meets the European Union's requirements for reducing hazardous substances in electronics.
  • Halogen Free: The CSD88537ND is free from halogenated flame retardants, making it a suitable choice for applications where environmental concerns are paramount.

Equivalents

For similar functionalities, consider these alternatives to the CSD88537ND:

  • Other MOSFETs from Texas Instruments or Other Manufacturers: Designers and engineers can explore other MOSFET options from Texas Instruments or other manufacturers that offer similar features and performance characteristics.

Frequently Asked Questions

Q: What is the maximum voltage rating of the CSD88537ND?
A: The maximum voltage rating of the CSD88537ND is 60V.

Q: Is the CSD88537ND suitable for high-frequency applications?
A: Yes, the CSD88537ND features ultra-low Qg and Qgd, making it suitable for high-frequency applications.

Q: Does the CSD88537ND comply with environmental regulations?
A: Yes, the CSD88537ND is Pb-free, RoHS compliant, and halogen free, ensuring that it meets various environmental regulations.

Q: Can I use the CSD88537ND in an application that requires avalanche-rated performance?
A: Yes, the CSD88537ND is designed to withstand avalanche conditions, making it suitable for applications that require reliable performance under harsh conditions.

CSD88537ND

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VDS (V) 60 Configuration Dual
Rds(on) at VGS=10 V (max) (mΩ) 15 IDM - pulsed drain current (max) (A) 62
QG (typ) (nC) 14 QGD (typ) (nC) 2.3
QGS (typ) (nC) 4.6 VGS (V) 20
VGSTH typ (typ) (V) 3 ID - silicon limited at TC=25°C (A) 16
ID - package limited (A) 15 Logic level No
Operating temperature range (°C) -55 to 150 Rating Catalog

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CSD88537ND

60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND

Inventory:

8,483