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CSD19534Q5AT

100V N-Channel Transistor with 50A Current Rating

Inventory:9,527

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Overview of CSD19534Q5AT

The CSD19534Q5AT is a 100V, 40A N-channel power MOSFET designed for use in power conversion applications. This MOSFET features low on-resistance, ensuring high efficiency and low power consumption in a compact package.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate Control
  • D: Drain Connection
  • S: Source Connection

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the CSD19534Q5AT MOSFET for a more visual representation.

Key Features

  • High Voltage Capability: The CSD19534Q5AT can withstand a maximum voltage of 100V, making it suitable for use in high-voltage power conversion applications.
  • Low On-Resistance: This MOSFET offers low on-resistance, which results in high efficiency and low power consumption.
  • Suitable for High-Frequency Applications: With its fast switching times, the CSD19534Q5AT is ideal for use in high-frequency power conversion circuits.
  • RoHS Compliant: This MOSFET is lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmentally-friendly manufacturing and disposal.

Note: For detailed technical specifications, please refer to the CSD19534Q5AT datasheet.

Application

  • Power Conversion: The CSD19534Q5AT is suitable for use in power conversion applications, including DC/DC converters, motor control circuits, and power supplies.
  • High-Voltage Circuits: This MOSFET can be used in high-voltage circuits, such as electric vehicles, solar inverters, and industrial power systems.
  • Switching Power Supplies: The CSD19534Q5AT is ideal for use in switching power supplies, where high efficiency and fast switching times are required.

Functionality

The CSD19534Q5AT is an N-channel power MOSFET that provides low on-resistance and high voltage capability for efficient power conversion applications. Its fast switching times and RoHS compliance make it suitable for various high-performance circuits.

Usage Guide

  • Power Supply: Connect the MOSFET's source terminal (S) to the ground and the drain terminal (D) to the load circuit's output.
  • Gate Control: Apply a voltage signal to the gate terminal (G) to control the MOSFET's on-off state. To turn the MOSFET on, apply a voltage higher than the threshold voltage to the gate. To turn it off, apply a voltage lower than the threshold voltage.

Frequently Asked Questions

Q: What is the maximum voltage that the CSD19534Q5AT can handle?
A: The CSD19534Q5AT can handle a maximum voltage of 100V.

Q: Is the CSD19534Q5AT suitable for use in high-frequency circuits?
A: Yes, the CSD19534Q5AT features fast switching times, making it ideal for use in high-frequency power conversion circuits.

Equivalent

For similar functionalities, consider these alternatives to the CSD19534Q5AT:

  • IRF540NPBF: A similar N-channel power MOSFET from Infineon Technologies with low on-resistance and high voltage capability.
  • STP40NF10: This MOSFET from STMicroelectronics provides similar functionality with a compact TO-220 package.
  • IXTH40N25: An N-channel MOSFET from IXYS Corporation with high voltage capability and fast switching speed.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSONP-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 15.1 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.4 V Qg - Gate Charge 17 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 63 W Channel Mode Enhancement
Tradename NexFET Series CSD19534Q5A
Brand Texas Instruments Configuration Single
Fall Time 6 ns Forward Transconductance - Min 47 S
Height 1 mm Length 6 mm
Product Type MOSFET Rise Time 14 ns
Factory Pack Quantity 250 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 9 ns Width 4.9 mm
Unit Weight 0.000847 oz

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CSD19534Q5AT

100V N-Channel Transistor with 50A Current Rating

Inventory:

9,527