• CSD19532Q5B WSON-8
CSD19532Q5B WSON-8


N-CHANNEL SILICON MOSFET, 17A Drain Current, 100V Voltage Rating, 0.0057 Ohm Resistance

Quantity Unit Price(USD) Ext. Price
1 $1.377 $1.38
10 $1.161 $11.61
30 $1.043 $31.29
100 $0.850 $85.00
500 $0.791 $395.50
1000 $0.765 $765.00


*The price is for reference only.
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Overview of CSD19532Q5B

The CSD19532Q5B is a NexFET power MOSFET designed for high-efficiency power management applications. This MOSFET features a low on-state resistance, high switching frequency capabilities, and robust thermal performance, making it ideal for various power supply and motor control applications.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate connection
  • SOURCE: Source connection
  • DRAIN: Drain connection
  • VSS: Substrate connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD19532Q5B MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The CSD19532Q5B offers a low RDS(on) for efficient power management.
  • High Switching Frequency: Capable of high-speed switching operations, suitable for applications requiring fast response times.
  • Robust Thermal Performance: The MOSFET is designed to handle high power dissipation efficiently, ensuring reliable operation.
  • Overcurrent Protection: Includes overcurrent protection features to safeguard the MOSFET and the connected circuit from damage.
  • Compact Package: Available in a space-saving and thermally-enhanced package for ease of integration.

Note: For detailed technical specifications, please refer to the CSD19532Q5B datasheet.


  • Power Supply Units: Ideal for use in power supply units for efficient power conversion.
  • Motor Control: Suitable for motor control applications in robotics, industrial automation, and consumer electronics.
  • DC-DC Converters: Used in DC-DC converter circuits for voltage regulation and power management.


The CSD19532Q5B NexFET MOSFET provides reliable and efficient power switching capabilities for a wide range of power management applications. It offers low resistance, high performance, and thermal reliability for optimal operation.

Usage Guide

  • Gate Drive: Apply appropriate gate-to-source voltage to control the MOSFET switching behavior.
  • Power Connections: Connect the drain and source pins to the load circuit for power switching operations.

Frequently Asked Questions

Q: Can the CSD19532Q5B be used in high-frequency applications?
A: Yes, the CSD19532Q5B is capable of high-frequency switching suitable for various applications requiring fast response times.


For similar functionalities, consider these alternatives to the CSD19532Q5B:

  • CSD18532Q5A: Another NexFET MOSFET with slightly different specifications but similar performance characteristics.
  • CSD20532Q5C: This MOSFET offers enhanced features compared to the CSD19532Q5B for specific application requirements.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSON-CLIP-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 140 A
Rds On - Drain-Source Resistance 4.9 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.2 V Qg - Gate Charge 48 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 195 W Channel Mode Enhancement
Tradename NexFET Series CSD19532Q5B
Brand Texas Instruments Configuration Single
Fall Time 6 ns Forward Transconductance - Min 84 S
Height 1 mm Length 6 mm
Product Type MOSFET Rise Time 6 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 7 ns Width 5 mm
Unit Weight 0.003714 oz

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