• CSD18540Q5B VSON8


N-Channel Silicon Metal-oxide Semiconductor FET with 0.0033ohm resistance

Quantity Unit Price(USD) Ext. Price
1 $2.017 $2.02
10 $1.749 $17.49
30 $1.582 $47.46
100 $1.250 $125.00
500 $1.172 $586.00
1000 $1.137 $1,137.00


*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for CSD18540Q5B using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of CSD18540Q5B

The CSD18540Q5B is a high-performance N-channel MOSFET designed for use in power management applications. This MOSFET features a low on-resistance and high load current capability, making it ideal for various power switching applications.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD18540Q5B MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The CSD18540Q5B offers low on-resistance, minimizing power losses and maximizing efficiency in power management applications.
  • High Load Current Capability: With its high load current capability, this MOSFET can handle significant power loads with ease.
  • High Performance: Designed for high-performance applications, the CSD18540Q5B delivers reliable and efficient power switching.
  • Robust Construction: Built to withstand demanding environments, this MOSFET ensures reliable operation under various conditions.

Note: For detailed technical specifications, please refer to the CSD18540Q5B datasheet.


  • Power Management: Ideal for power management applications such as voltage regulation, load switching, and motor control.
  • Switching Circuits: Suitable for use in switching circuits for various electronic devices and systems.
  • Power Supplies: Used in power supply units to regulate voltage and control power distribution.


The CSD18540Q5B is a high-performance N-channel MOSFET designed for efficient power switching in a wide range of applications. Its low on-resistance and high load current capability make it an excellent choice for power management solutions.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin (G) to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load to the drain pin (D) while ensuring proper grounding of the source pin (S).

Frequently Asked Questions

Q: What is the maximum load current supported by the CSD18540Q5B?
A: The CSD18540Q5B can handle high load currents, making it suitable for various power management applications requiring robust performance.

Q: Is the CSD18540Q5B suitable for automotive applications?
A: Yes, the CSD18540Q5B is designed to meet automotive industry standards, making it suitable for use in automotive power systems, motor drives, and other automotive electronics applications.


For similar functionalities, consider these alternatives to the CSD18540Q5B:

  • IRF9540N: A high-performance N-channel MOSFET offering similar characteristics to the CSD18540Q5B for power management applications.
  • STP55NF06L: This MOSFET from STMicroelectronics provides comparable performance and features for power switching applications.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSON-CLIP-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.2 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 41 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 188 W Channel Mode Enhancement
Tradename NexFET Series CSD18540Q5B
Brand Texas Instruments Configuration Single
Development Kit BOOSTXL-DRV8305EVM, DRV8704EVM Fall Time 3 ns
Height 1 mm Length 6 mm
Product Type MOSFET Rise Time 9 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Power MOSFET Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 6 ns Width 5 mm
Unit Weight 0.004254 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.