• CSD18534Q5A PowerTDFN-8
CSD18534Q5A PowerTDFN-8

CSD18534Q5A

channel metal-oxide semiconductor field-effect transistor

Inventory:6,706

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Overview of CSD18534Q5A

CSD18534Q5A is a MOSFET optimized for 60V operation and high current handling, providing excellent performance for analog and digital signal switching applications.

Pinout

The CSD18534Q5A pinout refers to the configuration and function of each pin in its VSONP-8(5x6) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the CSD18534Q5A has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-channel operation: The CSD18534Q5A is designed as a N-channel MOSFET, allowing for efficient switching and low power consumption.
  • 60V operation: This MOSFET has a maximum voltage rating of 60V, making it suitable for high-voltage applications.
  • 50A current handling: The CSD18534Q5A can handle up to 50A of continuous current, making it suitable for demanding analog and digital signal switching applications.
  • Low resistance: With a low on-resistance of 0.0078 Ohm, this MOSFET minimizes power loss during switching operations.

Applications

  • Analog signal switching: The CSD18534Q5A is suitable for analog signal switching applications where high-speed and low-voltage operation are required.
  • Digital signal switching: This MOSFET can also be used in digital signal switching applications, providing reliable and efficient switching operations.

Advantages and Disadvantages

Advantages

  • Fast switching times: The CSD18534Q5A offers fast switching times, reducing power consumption and minimizing signal distortion.
  • High current handling: This MOSFET's ability to handle up to 50A of continuous current makes it suitable for demanding applications.
  • Low on-resistance: The CSD18534Q5A's low on-resistance minimizes power loss during switching operations, making it an efficient choice for analog and digital signal switching applications.

Disadvantages

  • Sensitive to temperature changes: Like most electronic components, the CSD18534Q5A's performance can be affected by temperature changes, which may require thermal management in certain applications.

Equivalents

For similar functionalities, consider these alternatives to the CSD18534Q5A:

  • Equivalent MOSFET 1: [Describe equivalent MOSFET]
  • Equivalent MOSFET 2: [Describe equivalent MOSFET]

CSD18534Q5A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case VSONP-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 9.8 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.9 V Qg - Gate Charge 17 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.1 W Channel Mode Enhancement
Tradename NexFET Series CSD18534Q5A
Brand Texas Instruments Configuration Single
Fall Time 2 ns Forward Transconductance - Min 122 S
Height 1 mm Length 6 mm
Product Type MOSFET Rise Time 5.5 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 5.2 ns Width 4.9 mm
Unit Weight 0.013404 oz

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CSD18534Q5A

channel metal-oxide semiconductor field-effect transistor

Inventory:

6,706