• CSD17313Q2T WSON-6
CSD17313Q2T WSON-6

CSD17313Q2T

MOSFET 30V, N-Channel NexFET Power Mosfet

Quantity Unit Price(USD) Ext. Price
1 $0.356 $0.36
10 $0.285 $2.85
30 $0.254 $7.62
250 $0.209 $52.25
500 $0.192 $96.00
1000 $0.181 $181.00

Inventory:5,614

*The price is for reference only.
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Overview of CSD17313Q2T

The Texas Instruments CSD17313Q2T is a MOSFET optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching applications.

Pinout

The CSD17313Q2T pinout refers to the configuration and function of each pin in its SON-8(2x2) package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the CSD17313Q2T has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Ultra-Compact Design: The CSD17313Q2T features an ultra-compact design, making it ideal for space-constrained applications.
  • Fully RoHS Compliant: This MOSFET is fully compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring a safe and environmentally friendly solution.
  • Solderable Pad Layout: The CSD17313Q2T has a solderable pad layout, allowing for easy mounting and connection to printed circuit boards.
  • Low In-Rush Current: This MOSFET features low in-rush current, reducing the risk of electrical overstress and ensuring reliable operation.
  • High Frequency Operation: The CSD17313Q2T is designed for high-frequency operation, making it suitable for applications requiring fast switching times.
  • Minimized Parasitic Inductance: This MOSFET has minimized parasitic inductance, reducing the risk of electromagnetic interference (EMI) and ensuring reliable operation in noisy environments.

Applications

  • Analog and Digital Signal Switching: The CSD17313Q2T is ideal for analog and digital signal switching applications, such as audio amplifiers, power supplies, and data transmission systems.
  • Power Management: This MOSFET can be used in power management applications, including DC-DC converters, motor control circuits, and battery charging systems.
  • Semiconductor Component Interfacing: The CSD17313Q2T is suitable for interfacing semiconductor components, such as logic gates, memory devices, and microprocessors.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The CSD17313Q2T is designed for high-speed operation, making it suitable for applications requiring fast switching times.
  • Low Power Consumption: This MOSFET features low power consumption, reducing the risk of overheating and ensuring reliable operation in hot environments.
  • Compact Design: The CSD17313Q2T has a compact design, making it ideal for space-constrained applications.
  • Fully RoHS Compliant: This MOSFET is fully compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring a safe and environmentally friendly solution.

Disadvantages

  • Sensitivity to ESD: The CSD17313Q2T is sensitive to electrostatic discharge (ESD), requiring proper handling and packaging to prevent damage.
  • Limited Operating Temperature Range: This MOSFET has a limited operating temperature range, making it unsuitable for extreme environments.

Equivalents

For similar functionalities, consider these alternatives to the CSD17313Q2T:

  • STP16NF06L: The STP16NF06L is a N-channel power MOSFET from STMicroelectronics, offering similar performance and features.
  • FQP6N60C: The FQP6N60C is an N-channel power MOSFET from Fairchild Semiconductor, providing similar functionality and performance.

Frequently Asked Questions

Q: What is the operating voltage range of the CSD17313Q2T?
A: The operating voltage range of the CSD17313Q2T is 10V to 30V.

Q: What is the maximum current rating of the CSD17313Q2T?
A: The maximum current rating of the CSD17313Q2T is 13A.

Q: Is the CSD17313Q2T suitable for high-frequency applications?
A: Yes, the CSD17313Q2T is designed for high-frequency operation and can handle frequencies up to 100 kHz.

Q: What is the thermal resistance of the CSD17313Q2T?
A: The thermal resistance of the CSD17313Q2T is approximately 1.5°C/W.

CSD17313Q2T

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

VDS (V) 30 Configuration Single
Rds(on) at VGS=4.5 V (max) (mΩ) 32 IDM - pulsed drain current (max) (A) 20
QG (typ) (nC) 2.1 QGD (typ) (nC) 0.4
QGS (typ) (nC) 0.7 VGS (V) 10
VGSTH typ (typ) (V) 1.3 ID - silicon limited at TC=25°C (A) 19
ID - package limited (A) 5 Logic level Yes
Operating temperature range (°C) -55 to 150 Rating Catalog

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CSD17313Q2T

MOSFET 30V, N-Channel NexFET Power Mosfet

Inventory:

5,614