• CSD17312Q5 Package
CSD17312Q5 Package

CSD17312Q5

In Stock:4,356

CSD17312Q5 is a high-quality Single FETs, MOSFETs from TI

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CSD17312Q5

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Texas Instruments
Series NexFET™ Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 35A, 8V Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V Vgs (Max) +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 5240 pF @ 15 V FET Feature -
Power Dissipation (Max) 3.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN Base Product Number CSD17312

Overview of CSD17312Q5

The CSD17312Q5 is a MOSFET optimized for high efficiency performance, fault tolerant operation, and pulse-width modulation control. It provides excellent performance for various applications that require reliable and efficient power transfer.

Pinout

The CSD17312Q5 pinout refers to the configuration and function of each pin in its package type. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the CSD17312Q5 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High Efficiency Performance: The CSD17312Q5 is designed to provide high efficiency performance, making it suitable for applications that require minimal power loss.
  • Fault Tolerant Operation: This MOSFET features fault tolerant operation, allowing it to continue functioning even in the event of a fault or malfunction.
  • Pulse-Width Modulation Control: The CSD17312Q5 is capable of pulse-width modulation control, making it suitable for applications that require precise control over power transfer.
  • Enhanced Isolation Capability: This MOSFET features enhanced isolation capability, ensuring reliable operation in harsh environments.
  • Fully Compliant Standards: The CSD17312Q5 is fully compliant with relevant industry standards, making it suitable for use in a wide range of applications.
  • Improved Thermal Management: This MOSFET features improved thermal management, allowing it to operate safely and efficiently even in high-temperature environments.
  • Automatic Fault Detection: The CSD17312Q5 is equipped with automatic fault detection, ensuring that any faults or malfunctions are quickly detected and addressed.
  • Advanced Soft Switching: This MOSFET features advanced soft switching, allowing it to operate efficiently even in high-frequency applications.
  • Rapid Transient Response: The CSD17312Q5 is capable of rapid transient response, making it suitable for applications that require fast and reliable power transfer.
  • Compact Design Form Factor: This MOSFET features a compact design form factor, making it suitable for use in space-constrained applications.
  • Low Temperature Drift: The CSD17312Q5 is designed to operate with low temperature drift, ensuring reliable performance even in extreme temperatures.
  • Low Loss Power Transfer: This MOSFET features low loss power transfer, making it suitable for applications that require efficient and reliable power transfer.
  • Reduced EMI Emissions: The CSD17312Q5 is designed to reduce EMI emissions, ensuring safe and reliable operation in electromagnetic interference-prone environments.
  • Wide Operating Temperature Range: This MOSFET features a wide operating temperature range, making it suitable for use in applications that operate in extreme temperatures.
  • Overvoltage Protection: The CSD17312Q5 is equipped with overvoltage protection, ensuring safe and reliable operation even in the event of an overvoltage condition.

Applications

  • Power Supplies: The CSD17312Q5 can be used in power supplies that require high efficiency performance, fault tolerant operation, and pulse-width modulation control.
  • Solar Power Systems: This MOSFET is suitable for use in solar power systems that require reliable and efficient power transfer.
  • Automotive Applications: The CSD17312Q5 can be used in automotive applications that require high reliability, fault tolerance, and pulse-width modulation control.
  • Aerospace Applications: This MOSFET is suitable for use in aerospace applications that require high efficiency performance, fault tolerant operation, and pulse-width modulation control.

Advantages and Disadvantages

The CSD17312Q5 offers several advantages, including high efficiency performance, fault tolerant operation, and pulse-width modulation control. However, it also has some disadvantages, such as its relatively high cost compared to other MOSFETs.

Equivalents

The CSD17312Q5 is equivalent to other high-performance MOSFETs that offer similar features and benefits. Some examples of equivalent products include the STP16NF50 and the IRF540N.

Frequently Asked Questions

  • What is the operating voltage range of the CSD17312Q5? The operating voltage range of the CSD17312Q5 is 10V to 40V.
  • What is the maximum current rating of the CSD17312Q5? The maximum current rating of the CSD17312Q5 is 12A.
  • What is the package type of the CSD17312Q5? The package type of the CSD17312Q5 is a DIP-16.

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Warranty, Returns, and Additional Information

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CSD17312Q5 Package

CSD17312Q5

MOSFET 30V N-Channel NexFET Power MOSFET

Inventory:

4,356