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CM800E2C-66H

3300V Breakdown Voltage

Inventory:9,297

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Overview of CM800E2C-66H

The CM800E2C-66H is a high-power N-channel MOSFET module designed for high-voltage, high-speed switching applications. This module features a compact design and high efficiency, making it ideal for power electronics and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive power supply
  • IN1: Input signal 1
  • IN2: Input signal 2
  • GND: Ground connection
  • OUT: Output terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CM800E2C-66H MOSFET module for a visual representation.

Key Features

  • High Power Handling: The CM800E2C-66H can handle high power levels, suitable for demanding applications.
  • Fast Switching Speed: With high-speed switching capabilities, this module enables efficient power control.
  • Compact Design: The compact form factor of the module allows for space-efficient integration into electronic systems.
  • High Efficiency: The efficient design of the module reduces power losses and improves overall system efficiency.
  • Overcurrent Protection: Incorporates overcurrent protection features to safeguard the module and connected components.

Note: For detailed technical specifications, please refer to the CM800E2C-66H datasheet.

Application

  • Power Electronics: Ideal for use in power supply units, motor drives, and high-power switching circuits.
  • Renewable Energy Systems: Suitable for applications in solar inverters, wind turbine control, and energy storage systems.
  • Industrial Automation: Used in industrial control systems, robotics, and automated machinery for efficient power management.

Functionality

The CM800E2C-66H MOSFET module is designed for high-power switching applications, providing reliable and efficient control over power flow in electronic systems.

Usage Guide

  • Power Supply: Connect VCC (Positive power supply) and GND (Ground) to the appropriate power sources.
  • Input Signals: Apply logic signals to IN1 and IN2 to control the switching behavior of the module.
  • Output Connection: Connect the load or power device to the OUT terminal of the module for power delivery.

Frequently Asked Questions

Q: Is the CM800E2C-66H suitable for high-frequency applications?
A: Yes, the CM800E2C-66H features fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the CM800E2C-66H:

  • IXFN660N08T: A high-power N-channel MOSFET module with comparable performance and specifications.
  • FDBL0150N100: This module offers high power handling capabilities and efficient switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Triple
Collector- Emitter Voltage VCEO Max 3.3 kV Collector-Emitter Saturation Voltage 3.8 V
Continuous Collector Current at 25 C 800 A Gate-Emitter Leakage Current 500 nA
Pd - Power Dissipation 9.6 kW Package / Case Module
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Mitsubishi Electric Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Series CM800 Factory Pack Quantity 2
Subcategory IGBTs Technology Si

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