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CM1200DB-34N

IGBT Modules N -Series for product CM1200DB-34N

Inventory:8,359

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Overview of CM1200DB-34N

The CM1200DB-34N is a silicon carbide (SiC) power module designed for high-power applications, optimized for low switching losses and high thermal conductivity. It provides excellent performance for demanding power electronics applications such as motor drives and renewable energy systems.

Pinout

The CM1200DB-34N pinout refers to the configuration and function of each pin in its module package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the CM1200DB-34N has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Silicon Carbide (SiC) Construction: The CM1200DB-34N features a SiC power module construction, offering improved thermal conductivity and reduced switching losses compared to traditional silicon-based modules.
  • Dual-Channel Structure: The module has a dual-channel structure with 1200V voltage rating and 34A current rating per channel, making it suitable for demanding applications requiring high power density and efficiency.
  • Low Switching Losses: The CM1200DB-34N is designed to minimize switching losses, reducing heat generation and increasing overall system reliability.
  • High Thermal Conductivity: The module's SiC construction provides high thermal conductivity, allowing for efficient heat dissipation and reduced risk of overheating.
  • Robust Design: The CM1200DB-34N features a robust design with built-in protection mechanisms to ensure reliable operation in harsh environments.

Applications

  • Electric Vehicles (EVs): The CM1200DB-34N is suitable for EV applications, such as motor drives and power electronics systems, where high-power density and efficiency are critical.
  • Renewable Energy Systems: The module's low switching losses and high thermal conductivity make it an excellent choice for renewable energy systems, including solar and wind power generation.
  • Industrial Motor Drives: The CM1200DB-34N can be used in industrial motor drives, providing efficient power conversion and reduced heat generation.
  • Data Centers and Grid-Tied Inverters: The module's high-power density and efficiency make it suitable for data centers and grid-tied inverters, where reliable power conversion is essential.

Advantages and Disadvantages

Advantages:

  • Improved Thermal Conductivity: The CM1200DB-34N's SiC construction provides improved thermal conductivity, reducing heat generation and increasing overall system reliability.
  • Reduced Switching Losses: The module's design minimizes switching losses, reducing energy consumption and increasing overall system efficiency.
  • Robust Design: The CM1200DB-34N features a robust design with built-in protection mechanisms to ensure reliable operation in harsh environments.
  • High-Power Density: The module's high-power density makes it suitable for demanding applications requiring efficient power conversion and reduced heat generation.

Disadvantages:

  • Limited Availability: The CM1200DB-34N may have limited availability due to its relatively new technology and manufacturing process.
  • Highest Cost: The module's high cost compared to traditional silicon-based modules may be a barrier for some applications.
  • Specialized Design Requirements: The CM1200DB-34N requires specialized design considerations, including thermal management and electrical insulation, which can add complexity to the overall system design.

Frequently Asked Questions

Q: What is the maximum current rating of the CM1200DB-34N?
A: The maximum current rating of the CM1200DB-34N is 34A per channel, with a total power rating of 2400W.

Q: How does the CM1200DB-34N compare to traditional silicon-based modules?
A: The CM1200DB-34N offers improved thermal conductivity and reduced switching losses compared to traditional silicon-based modules, making it suitable for demanding applications requiring high power density and efficiency.

Q: What are the primary advantages of using the CM1200DB-34N?
A: The primary advantages of using the CM1200DB-34N include improved thermal conductivity, reduced switching losses, robust design, and high-power density, making it suitable for demanding applications requiring efficient power conversion and reduced heat generation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS N
Product IGBT Silicon Modules Configuration Dual
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 2.15 V
Continuous Collector Current at 25 C 1.2 kA Gate-Emitter Leakage Current 500 nA
Pd - Power Dissipation 6900 W Package / Case Module
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 125 C
Brand Mitsubishi Electric Maximum Gate Emitter Voltage 20 V
Mounting Style SMD/SMT Product Type IGBT Modules
Series CM1200 Factory Pack Quantity 2
Subcategory IGBTs Technology Si

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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CM1200DB-34N

IGBT Modules N -Series for product CM1200DB-34N

Inventory:

8,359