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C5D25170H

SiC Schottky, 25A, 1700V, G5 ZREC

Inventory:6,014

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Overview of C5D25170H

The C5D25170H is a high-speed CMOS static RAM organized as 262,144 words by 16 bits. It features fast access times and low power consumption, making it suitable for a wide range of applications in digital electronics.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • ALE: Address Latch Enable
  • CE: Chip Enable
  • WE: Write Enable
  • OE: Output Enable
  • BYTE: Byte Select
  • DQ0-DQ15: Data Input/Output
  • VCC: Positive Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the C5D25170H IC for a visual representation.

Key Features

  • High-Speed CMOS SRAM: Offers fast access times for efficient data retrieval.
  • Low Power Consumption: Suitable for power-sensitive applications.
  • 262,144 x 16-Bit Organization: Provides a large storage capacity for data-intensive applications.
  • Wide Operating Voltage Range: Supports various supply voltages for flexible integration.
  • Automatic Power-Down: Features power-saving modes for reduced energy consumption.

Note: For detailed technical specifications, please refer to the C5D25170H datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems and microcontroller applications.
  • Data Storage: Suitable for data buffering, caching, and temporary storage in digital systems.
  • Communication Systems: Used in communication modules and networking devices for data processing.

Functionality

The C5D25170H is a high-speed CMOS static RAM that provides efficient data storage and retrieval capabilities for various digital applications. It offers reliable performance and low power consumption.

Usage Guide

  • Power Supply: Connect VCC (Pin 7) to the positive power supply and GND (Pin 8) to ground.
  • Data Operations: Utilize the CE, WE, OE, and other control pins for reading and writing data.
  • Addressing: Apply the appropriate addresses to access different memory locations within the IC.

Frequently Asked Questions

Q: What is the access time of the C5D25170H?
A: The C5D25170H offers fast access times suitable for high-speed data operations.

Q: Can the C5D25170H operate at extended temperature ranges?
A: Yes, the C5D25170H is designed to operate reliably across extended temperature ranges, making it suitable for diverse environments.

Equivalent

For similar functionalities, consider these alternatives to the C5D25170H:

  • IS61LV25616AL: A comparable high-speed CMOS SRAM with a similar organization and performance.
  • K6X8016C3B-TF700: This CMOS static RAM offers high-speed operation and low power consumption for efficient data storage.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Schottky Diodes & Rectifiers RoHS Details
REACH Details Product Schottky Silicon Carbide Diodes
Mounting Style Through Hole Package / Case TO-247-2
Configuration Single Technology SiC
If - Forward Current 70 A Vrrm - Repetitive Reverse Voltage 1.7 kV
Vf - Forward Voltage 1.5 V Ifsm - Forward Surge Current 117 A
Ir - Reverse Current 20 uA Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Brand Wolfspeed
Pd - Power Dissipation 384 W Product Type Schottky Diodes & Rectifiers
Factory Pack Quantity 30 Subcategory Diodes & Rectifiers
Vr - Reverse Voltage 1.7 kV Unit Weight 0.497971 oz

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C5D25170H

SiC Schottky, 25A, 1700V, G5 ZREC

Inventory:

6,014