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BUZ100S

BUZ100S is a power MOSFET of N-channel type, made of silicon, capable of handling a current up to 77A and a voltage up to 55V

Quantity Unit Price(USD) Ext. Price
1 $0.547 $0.55
200 $0.213 $42.60
500 $0.205 $102.50
1000 $0.201 $201.00

Inventory:7,637

*The price is for reference only.
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Overview of BUZ100S

The BUZ100S is a N-channel enhancement mode vertical DMOS FET transistor designed for high voltage applications and switching circuits. It features a compact and robust design suitable for various electronic projects.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BUZ100S FET transistor for a visual representation.

Key Features

  • High Voltage Capability: The BUZ100S is capable of handling high voltage levels, making it suitable for power supply and switching applications.
  • Low On-Resistance: This FET transistor features low on-resistance, minimizing power losses and improving efficiency.
  • Fast Switching Speed: With its fast switching characteristics, the BUZ100S enables rapid switching operations in electronic circuits.
  • Compact Design: The compact package design of the BUZ100S enhances its versatility and ease of integration into various circuit designs.

Note: For detailed technical specifications, please refer to the BUZ100S datasheet.

Application

  • Switching Circuits: Ideal for use in various electronic switching circuits and applications.
  • Power Supply Systems: Suitable for power supply and voltage regulation systems requiring high voltage handling capability.
  • Motor Control: Used in motor control and driver circuits for efficient power management.

Functionality

The BUZ100S N-channel FET transistor provides reliable high voltage and switching capabilities, making it a versatile component for electronic projects and circuit designs.

Usage Guide

  • Gate Connection: Connect the control signal to the gate terminal (G) for controlling the switching characteristics.
  • Drain and Source Connections: Utilize the drain (D) and source (S) terminals to establish the current flow and switching operations in the circuit.

Frequently Asked Questions

Q: Can the BUZ100S be used for high-frequency switching applications?
A: Yes, the fast switching speed of the BUZ100S enables its use in high-frequency switching applications with efficient performance.

Equivalent

For similar functionalities, consider these alternatives to the BUZ100S:

  • IRF3205: This N-channel FET transistor from International Rectifier offers comparable high voltage and switching capabilities.
  • BUZ11: The BUZ11 FET transistor provides similar features and performance for diverse electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SIPMOS® Package Bulk
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2375 pF @ 25 V Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3

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BUZ100S

BUZ100S is a power MOSFET of N-channel type, made of silicon, capable of handling a current up to 77A and a voltage up to 55V

Inventory:

7,637