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BUP313D

IGBT Transistors LOW LOSS DuoPack 1200V 15A

Inventory:8,815

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Overview of BUP313D

The BUP313D is a N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications. With a voltage rating of 1200V and a current rating of 40A, this IGBT is suitable for various industrial and high-power electronic applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector(C): Connects to the high-current load
  • Emitter(E): Ground connection for the transistor
  • G (Gate): Control terminal for turning the transistor on and off

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BUP313D IGBT for a visual representation.

Key Features

  • High Voltage and Current Rating: The BUP313D has a high voltage rating of 1200V and a current rating of 40A, making it suitable for high power applications.
  • Fast Switching: This IGBT offers fast switching characteristics, enabling efficient control of high-power circuits.
  • Low Saturation Voltage: With low saturation voltage, the BUP313D minimizes power dissipation and heat generation during operation.
  • High Input Impedance: The gate of the BUP313D has high input impedance, allowing for easy and efficient control signal application.

Note: For detailed technical specifications, please refer to the BUP313D datasheet.

Application

  • Motor Drives: Suitable for driving high-power motors and controlling large electrical loads.
  • Power Supplies: Used in high-voltage power supply applications where efficient power switching is required.
  • Inverters: Commonly employed in inverter circuits for converting DC power to AC power in applications such as solar inverters and industrial drives.

Functionality

The BUP313D is a high-performance N-channel IGBT designed for efficient and reliable high-power switching operations. It provides robust control of high-current and high-voltage loads in various industrial and electronic applications.

Usage Guide

  • Connection: Connect the collector (C) to the high-current load, the emitter (E) to the ground, and apply the control signal to the gate (G) to switch the IGBT on and off.
  • Driver Circuit: Use an appropriate driver circuit to ensure proper and safe switching of the BUP313D in high-power applications.
  • Heat Dissipation: Implement suitable heat sinks and thermal management to dissipate the heat generated during high-power operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the BUP313D?
A: The BUP313D has a voltage rating of 1200V, making it suitable for high-voltage applications.

Q: Does the BUP313D require a high-current driver circuit?
A: Yes, the BUP313D requires a driver circuit capable of delivering the necessary current for efficient switching in high-power applications.

Equivalent

For similar functionalities, consider these alternatives to the BUP313D:

  • FGL40N120AND: This is a 1200V N-channel IGBT with a current rating of 40A, offering similar performance for high-power switching applications.
  • IRG4BC40UD: An alternative N-channel IGBT designed for high-power switching, suitable for applications with similar voltage and current requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-218-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Continuous Collector Current Ic Max 32 A
Height 12.5 mm Length 15 mm
Product Type IGBT Transistors Factory Pack Quantity 250
Subcategory IGBTs Width 4.9 mm

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BUP313D

IGBT Transistors LOW LOSS DuoPack 1200V 15A

Inventory:

8,815