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BUL1102EFP

NPN 450V 4A Power Bipolar Junction Transistor in TO-220FP Package

Inventory:6,849

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Overview of BUL1102EFP

The BUL1102EFP is a N-channel power MOSFET designed for high-speed switching applications in power supplies, motor control, and other electronic systems. This MOSFET features a low on-state resistance and high dv/dt capability, making it suitable for efficient power management.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the usage of the BUL1102EFP MOSFET in a typical switching circuit for better understanding.

Key Features

  • High-Speed Switching: The BUL1102EFP offers fast switching capabilities, ideal for applications requiring rapid switching.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power loss and heat generation during operation.
  • High dv/dt Capability: The BUL1102EFP can withstand high voltage rates of change, ensuring reliable performance in dynamic circuits.
  • Enhanced Power Management: Suitable for power supply units, motor control circuits, and other power management applications.

Note: For detailed technical specifications, please refer to the BUL1102EFP datasheet.

Application

  • Power Supplies: Effective for switching power supply designs due to its high-speed switching and low resistance characteristics.
  • Motor Control: Used in motor drive circuits for efficient control of motor speed and direction.
  • Electronic Systems: Suitable for various electronic systems requiring high-speed switching and power management.

Functionality

The BUL1102EFP N-channel power MOSFET is designed to facilitate high-speed switching operations with minimal power loss, making it a reliable component in power electronics applications.

Usage Guide

  • Gate Drive: Apply appropriate voltage levels to the gate pin for turning the MOSFET on and off effectively.
  • Load Connection: Connect the load to the drain pin while ensuring proper source and gate connections.
  • Heat Dissipation: Implement suitable heat sinking solutions if operating the MOSFET at high currents to prevent overheating.

Frequently Asked Questions

Q: Is the BUL1102EFP suitable for high-frequency applications?
A: Yes, the BUL1102EFP's high-speed switching capability makes it suitable for high-frequency applications in power electronics.

Equivalent

For alternatives with similar functionality, consider these MOSFETs:

  • BUK110-50DL: A comparable N-channel MOSFET with similar performance characteristics.
  • IRLB8748PbF: This MOSFET also offers high-speed switching and low on-state resistance for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Operating Range Industrial Operating Temp Min Celsius -65.0
Operating Temp Max Celsius 150.0 ECCN US EAR99
ECCN EU NEC Packing Type Tube
RoHs compliant Ecopack2 Grade Industrial
Package Name TO-220FP

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BUL1102EFP

NPN 450V 4A Power Bipolar Junction Transistor in TO-220FP Package

Inventory:

6,849