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BUK9575-100A

N-Channel Metal-oxide Semiconductor FET

Inventory:5,585

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Overview of BUK9575-100A

The BUK9575-100A is a N-channel TrenchMOS standard level FET with a 100V drain-source voltage rating and a continuous drain current of 100A. It is designed for high power applications requiring efficient switching and low on-resistance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BUK9575-100A FET for a visual representation.

Key Features

  • High Voltage Rating: Capable of withstanding up to 100V drain-source voltage for robust performance in high voltage applications.
  • High Current Capability: Supports a continuous drain current of 100A, suitable for high power switching applications.
  • Low On-Resistance: Features low on-resistance to minimize power loss and heat generation during operation.
  • TrenchMOS Technology: Utilizes N-channel TrenchMOS technology for improved efficiency and performance.
  • Fast Switching Speed: Offers fast switching characteristics for rapid switching transitions in power circuits.

Note: For detailed technical specifications, please refer to the BUK9575-100A datasheet.

Application

  • Power Electronics: Ideal for power electronics applications requiring high voltage and current handling capabilities.
  • Motor Control: Suitable for motor control circuits where efficient switching and high current capacity are essential.
  • Power Supplies: Used in power supply units to regulate and switch high power loads efficiently.

Functionality

The BUK9575-100A is a high-power N-channel FET designed for efficient switching in high voltage applications. It offers reliable performance with its high current capability and low on-resistance.

Usage Guide

  • Gate Control: Drive the gate (G) with appropriate voltage levels to control the switching behavior of the FET.
  • Drain-Source Connection: Connect the drain (D) to the load and the source (S) to the ground for proper circuit operation.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating of the BUK9575-100A?
A: The BUK9575-100A can handle a maximum drain-source voltage of 100V.

Q: Is the BUK9575-100A suitable for high power applications?
A: Yes, the BUK9575-100A is designed for high power applications with its 100A continuous drain current rating.

Equivalent

For similar functionalities, consider these alternatives to the BUK9575-100A:

  • IRF840: This N-channel MOSFET offers comparable high voltage and current handling capabilities for power applications.
  • IXFK120N25X2: A high-power N-channel MOSFET with similar specifications to the BUK9575-100A for efficient power switching.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 23 A Rds On - Drain-Source Resistance 72 mOhms
Vgs - Gate-Source Voltage - 15 V, + 15 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 98 W
Channel Mode Enhancement Brand Nexperia
Configuration Single Fall Time 57 ns
Height 9.4 mm Length 10.3 mm
Product Type MOSFET Rise Time 120 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 58 ns
Typical Turn-On Delay Time 13 ns Width 4.7 mm
Part # Aliases BUK9575-100A,127 Unit Weight 0.068784 oz

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packageimg

BUK9575-100A

N-Channel Metal-oxide Semiconductor FET

Inventory:

5,585