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BUK9508-55

N-Channel Metal-oxide Semiconductor FET Power Field-Effect Transistor

Inventory:5,161

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
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  • 7*24 hours service quarantee

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Submit your quote request for BUK9508-55 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of BUK9508-55

The BUK9508-55 is a logic-level N-channel MOSFET designed for high-speed switching applications. This MOSFET offers a low on-resistance and fast switching characteristics, making it suitable for use in various power management and motor control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate
  • VSS: Substrate
  • VSS: Substrate
  • VSS: Substrate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BUK9508-55 MOSFET for a visual representation.

Key Features

  • Logic-Level Gate Drive: The BUK9508-55 can be driven directly with logic-level signals, simplifying control interface requirements.
  • Low On-Resistance: This MOSFET offers a low on-resistance, resulting in minimal conduction losses.
  • Fast Switching Speed: With fast switching characteristics, the BUK9508-55 enables high-speed circuit operation.
  • High Voltage Capability: Capable of handling high voltages for power switching applications.
  • Thermal Stability: Designed for thermal stability to ensure reliable performance under varying conditions.

Note: For detailed technical specifications, please refer to the BUK9508-55 datasheet.

Application

  • Power Management: Ideal for power switching and control applications in various electronic systems.
  • Motor Control: Suitable for motor drive circuits requiring high-speed switching capabilities.
  • Inverter Systems: Used in inverter systems for DC to AC power conversion.

Functionality

The BUK9508-55 MOSFET is a reliable and efficient solution for high-speed switching applications. It provides low on-resistance and fast switching speeds, making it a versatile component in power electronics.

Usage Guide

  • Gate Drive: Apply logic-level signals to the Gate pin to control the switching operation of the MOSFET.
  • Connectivity: Connect the Drain and Source pins to the respective circuit nodes for power switching.
  • Voltage Ratings: Ensure that the MOSFET voltage ratings are suitable for the application requirements.

Frequently Asked Questions

Q: Is the BUK9508-55 suitable for high-frequency applications?
A: Yes, the BUK9508-55 features fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the BUK9508-55:

  • BUK456-78: A logic-level MOSFET with comparable specifications for high-speed switching applications.
  • IRF540N: This N-channel MOSFET offers similar characteristics to the BUK9508-55 for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V Id - Continuous Drain Current 75 A
Rds On - Drain-Source Resistance 8 mOhms Vgs - Gate-Source Voltage - 15 V, + 15 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 187 W Channel Mode Enhancement
Brand NXP Semiconductors Configuration Single
Fall Time 100 ns Height 9.4 mm
Length 10.3 mm Product Type MOSFET
Rise Time 120 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 225 ns Typical Turn-On Delay Time 45 ns
Width 4.5 mm Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

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BUK9508-55

N-Channel Metal-oxide Semiconductor FET Power Field-Effect Transistor

Inventory:

5,161
Overview of BUK9508-55 Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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