• BSZ16DN25NS3G 8-PowerTDFN
BSZ16DN25NS3G 8-PowerTDFN

BSZ16DN25NS3G

Advanced power management solutions for modern electronics

Inventory:8,066

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Overview of BSZ16DN25NS3G

The BSZ16DN25NS3G is a MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.

Pinout

The BSZ16DN25NS3G pinout refers to the configuration and function of each pin in its TSDSON-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BSZ16DN25NS3G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High-Speed Operation: The BSZ16DN25NS3G is designed for high-speed applications, making it suitable for use in systems that require fast switching times.
  • Low-Voltage Operations: This MOSFET can operate at low voltages, making it ideal for use in battery-powered or low-voltage systems.
  • High Current Handling: The BSZ16DN25NS3G has a high current handling capacity of 10.9A, making it suitable for use in applications that require high currents.
  • OptiMOS Technology: This MOSFET features Infineon's OptiMOS technology, which provides improved performance and efficiency compared to traditional MOSFETs.
  • RoHS Compliant: The BSZ16DN25NS3G is RoHS compliant, making it suitable for use in environmentally friendly applications.

Applications

  • Flight Control Systems: The BSZ16DN25NS3G can be used in flight control systems that require high-speed and low-voltage operations.
  • Industrial Robots: This MOSFET is suitable for use in industrial robots that require high current handling and fast switching times.
  • Data Centers: The BSZ16DN25NS3G can be used in data centers to provide power supply and control systems.
  • Smart Grids: This MOSFET is suitable for use in smart grids that require high-speed and low-voltage operations.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The BSZ16DN25NS3G provides fast switching times, making it suitable for use in high-speed applications.
  • Low-Voltage Operations: This MOSFET can operate at low voltages, making it ideal for use in battery-powered or low-voltage systems.
  • High Current Handling: The BSZ16DN25NS3G has a high current handling capacity of 10.9A, making it suitable for use in applications that require high currents.

Disadvantages

  • High Cost: The BSZ16DN25NS3G is a high-performance MOSFET and may be more expensive than other options on the market.
  • Complex Design Requirements: This MOSFET requires complex design requirements, making it less suitable for use in simple applications.

Equivalents

For similar functionalities, consider these alternatives to the BSZ16DN25NS3G:

  • STP16NF06L: This MOSFET from STMicroelectronics provides similar performance and functionality to the BSZ16DN25NS3G.
  • FQP6N60C: The FQP6N60C from Fairchild Semiconductor is another option that provides high-speed and low-voltage operations.
  • IRF540N: This MOSFET from International Rectifier provides a similar current handling capacity to the BSZ16DN25NS3G.

Frequently Asked Questions

Q: What is the maximum voltage rating of the BSZ16DN25NS3G?
A: The maximum voltage rating of the BSZ16DN25NS3G is 250V.

Q: What is the maximum current handling capacity of the BSZ16DN25NS3G?
A: The maximum current handling capacity of the BSZ16DN25NS3G is 10.9A.

Q: Is the BSZ16DN25NS3G RoHS compliant?
A: Yes, the BSZ16DN25NS3G is RoHS compliant.

Q: What is the operating temperature range of the BSZ16DN25NS3G?
A: The operating temperature range of the BSZ16DN25NS3G is -40°C to 150°C.

BSZ16DN25NS3G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN Base Product Number BSZ16DN25

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BSZ16DN25NS3G

Advanced power management solutions for modern electronics

Inventory:

8,066