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BSZ160N10NS3GATMA1

N-channel MOSFET with a maximum voltage rating of 100V and a current rating of 40A, packaged in TSDSON-8 OptiMOS 3 configuration

Inventory:5,812

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Overview of BSZ160N10NS3GATMA1

The BSZ160N10NS3GATMA1 is a 100V N-channel power MOSFET designed for high-power switching applications. It features low ON-resistance and high current capability, making it suitable for a wide range of power management and conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • V: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSZ160N10NS3GATMA1 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The BSZ160N10NS3GATMA1 can handle up to 100V making it suitable for high-voltage applications.
  • Low ON-Resistance: With low RDS(ON), the MOSFET minimizes power loss and heat generation in switch-mode applications.
  • High Current Capability: Capable of handling high currents, making it suitable for power switching and motor control applications.
  • Fast Switching Speed: The MOSFET offers fast switching characteristics, enabling efficient and responsive power control.
  • Enhanced Thermal Performance: Designed for enhanced thermal performance to ensure reliability under high-power operation.

Note: For detailed technical specifications, please refer to the BSZ160N10NS3GATMA1 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as voltage regulators, DC-DC converters, and power supplies.
  • Switching Circuits: Suitable for high-power switching applications, including motor control, inverters, and electronic relays.
  • Power Distribution: Used in applications requiring efficient power distribution and control, such as smart grid systems and industrial automation.

Functionality

The BSZ160N10NS3GATMA1 is a high-voltage N-channel MOSFET designed for efficient power switching and control. It offers low ON-resistance and high current capability for reliable power management and conversion.

Usage Guide

  • G: Connect the gate terminal to the control signal for switching the MOSFET.
  • V: Connect the drain terminal to the load or power source.
  • S: Connect the source terminal to the ground or common reference point.

Frequently Asked Questions

Q: What is the maximum voltage rating for the BSZ160N10NS3GATMA1?
A: The BSZ160N10NS3GATMA1 can handle a maximum voltage of 100V, making it suitable for high-voltage applications.

Q: Is the BSZ160N10NS3GATMA1 suitable for motor control applications?
A: Yes, the BSZ160N10NS3GATMA1's high current capability and fast switching speed make it suitable for motor control and high-power switching applications.

Equivalent

For similar functionalities, consider these alternatives to the BSZ160N10NS3GATMA1:

  • IRF520N: This N-channel MOSFET offers similar high-voltage and high-current capabilities for power switching applications.
  • FQP30N06L: A high-voltage N-channel MOSFET with low ON-resistance, suitable for power management and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing PQFN 3x3 msl 1
halogenFree yes customerInfo STANDARD
fgr L04 productClassification COM
productStatusInfo active hfgr A
packageName PG-TSDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000482390
fourBlockPackageName PG-TSDSON-8-2 rohsCompliant yes
opn BSZ160N10NS3GATMA1 completelyPbFree no
sapMatnrSali SP000482390

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packageimg

BSZ160N10NS3GATMA1

N-channel MOSFET with a maximum voltage rating of 100V and a current rating of 40A, packaged in TSDSON-8 OptiMOS 3 configuration

Inventory:

5,812