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BSZ096N10LS5ATMA1

OptiMOSTM5Power-Transistor,100V

Quantity Unit Price(USD) Ext. Price
1 $1.341 $1.34
200 $0.519 $103.80
500 $0.501 $250.50
1000 $0.493 $493.00

Inventory:7,702

*The price is for reference only.
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Overview of BSZ096N10LS5ATMA1

The BSZ096N10LS5ATMA1 is a power MOSFET designed for high-performance switching applications in power supplies, motor control, and other power electronics systems. This MOSFET offers low on-state resistance and high current capability, making it suitable for demanding industrial and automotive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Drain (D): Output terminal for the load
  • Gate (G): Input terminal for controlling the MOSFET
  • Source (S): Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSZ096N10LS5ATMA1 MOSFET for a visual representation.

Key Features

  • High Current Capability: The BSZ096N10LS5ATMA1 can handle high currents, making it suitable for power applications.
  • Low On-State Resistance: With low RDS(on) values, this MOSFET minimizes power losses and improves efficiency.
  • Fast Switching Speed: The MOSFET offers fast switching times, reducing switching losses in power electronic circuits.
  • High Voltage Rating: It can withstand high voltage levels, ensuring robust operation in various applications.
  • Temperature Stability: The BSZ096N10LS5ATMA1 exhibits good thermal performance and temperature stability under load.

Note: For detailed technical specifications, please refer to the BSZ096N10LS5ATMA1 datasheet.

Application

  • Power Supplies: Ideal for use in high-power DC-DC converters and voltage regulation circuits.
  • Motor Control: Suitable for motor drive applications in industrial and automotive systems.
  • Inverters: Used in power inverter systems for converting DC power to AC for various applications.

Functionality

The BSZ096N10LS5ATMA1 power MOSFET is designed to efficiently switch high currents with low losses, making it a reliable choice for demanding power electronics applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching of the MOSFET.
  • Load Connection: Connect the load between the Drain and Source pins, ensuring proper current flow.
  • Heat Management: Adequate heat sinking is recommended to maintain the MOSFET within safe operating temperatures.

Equivalent

For similar functionalities, consider these alternatives to the BSZ096N10LS5ATMA1:

  • IRF3205: A power MOSFET with similar high-current handling capabilities for power applications.
  • FQP30N06L: This MOSFET offers low on-state resistance and fast switching speeds for efficient power control.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
FET Feature Standard Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL Package / Case TSDSON-8
Base Product Number BSZ096 Manufacturer Infineon
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 9.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.7 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Development Kit EVAL_1K4W_ZVS_FB_CFD7
Fall Time 5.3 ns Forward Transconductance - Min 22 S
Height 1.1 mm Length 3.3 mm
Product Type MOSFET Rise Time 4.6 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 5.7 ns Width 3.3 mm
Part # Aliases BSZ096N10LS5 SP001352994 Unit Weight 0.001367 oz

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