• BSZ096N10LS5ATMA1 TSDSON-8
BSZ096N10LS5ATMA1 TSDSON-8

BSZ096N10LS5ATMA1

OptiMOSTM5Power-Transistor,100V

Quantity Unit Price(USD) Ext. Price
1 $1.638 $1.64
200 $0.634 $126.80
500 $0.613 $306.50
1000 $0.601 $601.00

Inventory:7,702

*The price is for reference only.
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Overview of BSZ096N10LS5ATMA1

The BSZ096N10LS5ATMA1 is a MOSFET optimized for high-speed switching applications with low-voltage operations. It provides excellent performance for analog and digital signal switching in various industries, including automotive, power management, industrial, electronic components, battery management systems, motor control, DC-DC converters, LED lighting, telecommunications, and renewable energy systems.

Pinout

The BSZ096N10LS5ATMA1 pinout refers to the configuration and function of each pin in its TSDSON EP-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BSZ096N10LS5ATMA1 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Low on-state resistance: The BSZ096N10LS5ATMA1 offers low on-state resistance, which enables efficient power switching and reduces energy losses in the system.
  • Optimized for high-speed switching applications: This MOSFET is designed to handle high-frequency switching operations, making it suitable for various applications that require fast signal processing.
  • Low gate charge: The BSZ096N10LS5ATMA1 has a low gate charge, which reduces the power required to switch the device on and off, resulting in improved system efficiency.
  • Enhanced ruggedness and reliability: This MOSFET is built with robust materials and manufacturing processes that ensure high reliability and resistance to environmental stressors.
  • Designed for ease of use in power systems: The BSZ096N10LS5ATMA1 is designed to simplify the integration process into various power systems, making it a reliable choice for engineers and designers.
  • TO-252-DS package for easy mounting and heat dissipation: The TO-252-DS package provides an efficient way to mount and dissipate heat from the device, ensuring optimal performance in high-power applications.

Applications

  • Automotive industry: The BSZ096N10LS5ATMA1 is suitable for various automotive applications that require efficient power switching and low-voltage operations, such as battery management systems, motor control, and DC-DC converters.
  • Power management: This MOSFET can be used in power management systems to efficiently switch power between different components or stages.
  • Industrial applications: The BSZ096N10LS5ATMA1 is suitable for various industrial applications that require high-speed switching and low-voltage operations, such as motor control, DC-DC converters, and LED lighting.
  • Electronic components: This MOSFET can be used in electronic component applications that require efficient power switching and low-voltage operations, such as battery management systems and motor control.
  • Battery management systems: The BSZ096N10LS5ATMA1 is suitable for battery management systems that require efficient power switching and low-voltage operations to manage energy storage and release.
  • Motor control: This MOSFET can be used in motor control applications that require high-speed switching and low-voltage operations, such as DC-DC converters and motor drives.
  • DC-DC converters: The BSZ096N10LS5ATMA1 is suitable for DC-DC converter applications that require efficient power switching and low-voltage operations to convert energy between different stages or components.
  • LED lighting: This MOSFET can be used in LED lighting applications that require high-speed switching and low-voltage operations, such as LED drivers and dimming circuits.
  • Telecommunications: The BSZ096N10LS5ATMA1 is suitable for telecommunications applications that require efficient power switching and low-voltage operations, such as DC-DC converters and motor control in network equipment.
  • Renewable energy systems: This MOSFET can be used in renewable energy systems that require high-speed switching and low-voltage operations, such as solar inverters and wind turbine controllers.

Equivalents

The BSZ096N10LS5ATMA1 can be compared to other MOSFETs with similar characteristics, such as:

  • BST95NP10L-3: This MOSFET has a similar voltage range and current handling capabilities, making it suitable for various applications that require efficient power switching.
  • IRF540N: The IRF540N is another popular MOSFET with high-speed switching capabilities and low on-state resistance, making it suitable for various industrial and automotive applications.

BSZ096N10LS5ATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
FET Feature Standard Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL Package / Case TSDSON-8
Base Product Number BSZ096 Manufacturer Infineon
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 9.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.7 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Development Kit EVAL_1K4W_ZVS_FB_CFD7
Fall Time 5.3 ns Forward Transconductance - Min 22 S
Height 1.1 mm Length 3.3 mm
Product Type MOSFET Rise Time 4.6 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 5.7 ns Width 3.3 mm
Part # Aliases BSZ096N10LS5 SP001352994 Unit Weight 0.001367 oz

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BSZ096N10LS5ATMA1

OptiMOSTM5Power-Transistor,100V

Inventory:

7,702