• BSS84-7-F SOT23-3
BSS84-7-F SOT23-3

BSS84-7-F

BSS84-7-F - MOSFETP50V0.13ASOT23, RL

Quantity Unit Price(USD) Ext. Price
20 $0.031 $0.62
200 $0.024 $4.80
600 $0.021 $12.60
3000 $0.018 $54.00
9000 $0.017 $153.00
21000 $0.016 $336.00

Inventory:4,011

*The price is for reference only.
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Overview of BSS84-7-F

The BSS84-7-F is a N-channel enhancement mode field effect transistor (FET) designed for various low voltage applications. This transistor features a compact SOT-23 package and is capable of high-speed switching, making it suitable for use in power management circuits, battery-powered devices, and signal amplification applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSS84-7-F FET for a visual representation.

Key Features

  • N-Channel Enhancement Mode: The BSS84-7-F operates as an N-channel enhancement mode FET, enabling efficient switching in low voltage applications.
  • Compact Package: Housed in a space-saving SOT-23 package, this transistor is suitable for designs with limited board space.
  • High-Speed Switching: With its high-speed switching capability, the BSS84-7-F supports rapid transitions in digital circuits.
  • Low Threshold Voltage: The FET has a low threshold voltage, allowing for control in low voltage systems.
  • Low ON-Resistance: The BSS84-7-F exhibits low ON-resistance, minimizing power dissipation and improving efficiency.

Note: For detailed technical specifications, please refer to the BSS84-7-F datasheet.

Application

  • Power Management: Ideal for use in power management circuits for efficient switching and control.
  • Battery-Powered Devices: Suitable for battery-operated devices where low power consumption is essential.
  • Signal Amplification: Can be utilized in signal amplification circuits for improved signal quality and strength.

Functionality

The BSS84-7-F N-channel FET is designed to facilitate high-speed switching in low voltage applications, providing reliable and precise control over power and signals.

Usage Guide

  • Gate Connection: Connect the G (Gate) pin to the driver circuit for control voltage input.
  • Drain Connection: Link the D (Drain) pin to the load or output for power transfer.
  • Source Connection: Attach the S (Source) pin to the ground or common reference point.

Frequently Asked Questions

Q: Is the BSS84-7-F suitable for high-frequency applications?
A: The BSS84-7-F is optimized for low voltage switching applications and may not be ideal for high-frequency applications due to its inherent characteristics.

Equivalent

For similar functionalities, consider these alternatives to the BSS84-7-F:

  • BS170: A low power N-channel enhancement mode FET suitable for low voltage applications.
  • 2N7002: An N-channel MOSFET with similar characteristics to the BSS84-7-F, offering flexibility in various designs.
  • IRF3205: A power MOSFET with higher voltage and current ratings compared to the BSS84-7-F, suitable for more demanding applications.

BSS84-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 130 mA Rds On - Drain-Source Resistance 10 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 280 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 300 mW
Channel Mode Enhancement Series BSS84
Brand Diodes Incorporated Configuration Single
Forward Transconductance - Min 0.05 S Height 1 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type Enhancement Mode Field Effect Transistor Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 10 ns Width 1.3 mm
Unit Weight 0.000282 oz

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BSS84-7-F

BSS84-7-F - MOSFETP50V0.13ASOT23, RL

Inventory:

4,011