• BSS52 TO-39-3
  • BSS52 TO-39-3
BSS52 TO-39-3
BSS52 TO-39-3

BSS52

60V and 5A capable, suitable for various electronic circuits

Inventory:3,793

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Overview of BSS52

The BSS52 is an N-channel enhancement mode Field-Effect Transistor (FET) designed for use in a variety of electronic applications. It offers low threshold voltage and high switching speed, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSS52 FET for a visual representation.

Key Features

  • Enhancement Mode FET: The BSS52 is an N-channel enhancement mode FET, enabling easy control of the transistor action.
  • Low Threshold Voltage: With a low VGS(TH), the BSS52 can be easily turned on with minimal gate voltage, making it suitable for low-voltage applications.
  • High Switching Speed: The FET offers high-speed switching capabilities, ensuring efficient performance in switching applications.
  • Low On-Resistance: The BSS52 exhibits low on-resistance, resulting in reduced conduction losses and improved power efficiency.

Note: For detailed technical specifications, please refer to the BSS52 datasheet.

Application

  • Power Management: Ideal for use in power management circuits due to its low on-resistance and high switching speed.
  • Switching Circuits: Suitable for switching applications where fast and efficient switching is required.
  • Voltage Regulation: Can be used in voltage regulation circuits to control power flow and voltage levels.

Functionality

The BSS52 is an N-channel enhancement mode FET that provides efficient switching and power management capabilities. Its low threshold voltage and high switching speed make it a versatile component in various electronic circuits.

Usage Guide

  • Gate Control: Apply a suitable gate-source voltage to control the FET's conduction and switching behavior.
  • Drain-Source Connection: Connect the load or circuit to the drain and source terminals to utilize the FET's switching capabilities.

Frequently Asked Questions

Q: What is the typical threshold voltage of the BSS52?
A: The BSS52 typically has a threshold voltage (VGS(TH)) of around 1V, allowing for low-voltage operation.

Q: Can I use the BSS52 for high-frequency switching applications?
A: Yes, the BSS52 offers high switching speed and can be employed in high-frequency switching circuits with appropriate considerations for capacitance and inductance effects.

Equivalent

For similar functionalities, consider these alternatives to the BSS52:

  • BSS138: A similar N-channel FET with low threshold voltage and enhanced switching characteristics.
  • ZVN2110A: This N-channel FET from Diodes Incorporated offers comparable features and is suitable for similar electronic applications.

BSS52

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT REACH Details
Mounting Style Through Hole Package / Case TO-39-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Pd - Power Dissipation 5 W
Gain Bandwidth Product fT 70 MHz Brand Semelab / TT Electronics
Continuous Collector Current 5 A DC Collector/Base Gain hfe Min 40 at 2 A, 2 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 30
Subcategory Transistors Technology Si

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BSS52

60V and 5A capable, suitable for various electronic circuits

Inventory:

3,793