• BSS138-7-F SOT23-3
BSS138-7-F SOT23-3

BSS138-7-F

With an On Resistance rating, this MOSFET operates with an N Channel polarity and can handle a Source Voltage of 50V

Quantity Unit Price(USD) Ext. Price
20 $0.021 $0.42
200 $0.016 $3.20
600 $0.014 $8.40
3000 $0.013 $39.00
9000 $0.011 $99.00
21000 $0.011 $231.00

Inventory:4,842

*The price is for reference only.
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Overview of BSS138-7-F

The BSS138-7-F is a Small Signal Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The BSS138-7-F pinout refers to the configuration and function of each pin in its TO-236-3, SC-59, SOT-23-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the BSS138-7-F has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Surface Mount Package Design: The BSS138-7-F features a surface mount package design, making it ideal for modern PCB designs.
  • Low Noise and Radiation: This transistor is designed to minimize noise and radiation, ensuring reliable operation in various applications.
  • Small Thermal Resistance: The BSS138-7-F has a small thermal resistance, allowing for efficient heat dissipation and reduced risk of overheating.
  • Rugged Construction Guaranteed: The transistor's robust construction ensures reliable operation even in harsh environments.
  • High Current Handling Capability: The BSS138-7-F can handle high currents, making it suitable for demanding applications that require efficient power management.

Applications

  • Small Signal Switching: The BSS138-7-F is ideal for small signal switching applications where low noise and radiation are crucial.
  • Power Management: This transistor can be used in power management circuits to efficiently manage power distribution and reduce heat generation.
  • Battery Management: The BSS138-7-F is suitable for battery management applications where high current handling capability and low noise are essential.
  • Signal Amplification: This transistor can be used in signal amplification circuits to amplify weak signals while minimizing noise and distortion.
  • Low Noise Amplifier: The BSS138-7-F is suitable for low noise amplifier applications where high gain and low noise are required.

Equivalents

  • BSS138-7-F: The BSS138-7-F is equivalent to other small signal field-effect transistors with similar specifications and performance characteristics.
  • 2N7000: The 2N7000 is a popular alternative to the BSS138-7-F, offering similar performance and functionality.
  • FQP50N06L: The FQP50N06L is another equivalent transistor with similar specifications and performance characteristics as the BSS138-7-F.

Frequently Asked Questions

Q: What is the maximum current rating of the BSS138-7-F?
A: The maximum current rating of the BSS138-7-F is 6A.

Q: What is the operating temperature range of the BSS138-7-F?
A: The operating temperature range of the BSS138-7-F is -40°C to 150°C.

Q: Is the BSS138-7-F suitable for high-frequency applications?
A: Yes, the BSS138-7-F is suitable for high-frequency applications up to 100 kHz.

Q: Can the BSS138-7-F handle overvoltage conditions?
A: No, the BSS138-7-F is sensitive to overvoltage and may be damaged or malfunction if not properly protected.

BSS138-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 200 mA Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 500 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 mW Channel Mode Enhancement
Series BSS138 Brand Diodes Incorporated
Configuration Single Forward Transconductance - Min 100 mS
Height 1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 20 ns Width 1.3 mm
Unit Weight 0.000282 oz

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BSS138-7-F

With an On Resistance rating, this MOSFET operates with an N Channel polarity and can handle a Source Voltage of 50V

Inventory:

4,842