• BSS126H6327XTSA2 TO-236-3
BSS126H6327XTSA2 TO-236-3


SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating


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Overview of BSS126H6327XTSA2

The BSS126H6327XTSA2 is an N-channel enhancement mode field-effect transistor (FET) designed for high-speed switching applications. It features a low threshold voltage and high current capability, making it suitable for various electronic circuits requiring efficient switching.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • S: Source
  • G: Gate
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSS126H6327XTSA2 for a visual representation.

Key Features

  • Enhancement Mode FET: Designed as an N-channel enhancement mode FET for high-speed switching.
  • Low Threshold Voltage: Features a low threshold voltage for improved efficiency in switching applications.
  • High Current Capability: Capable of handling high currents, making it suitable for power applications.
  • Fast Switching Speed: Provides fast switching characteristics for rapid switching operations.
  • Low ON Resistance: Offers low ON resistance for reduced power losses and improved efficiency.

Note: For detailed technical specifications, please refer to the BSS126H6327XTSA2 datasheet.


  • Switching Circuits: Ideal for use in electronic circuits requiring high-speed switching capabilities.
  • Power Management: Suitable for power management applications where efficient switching is essential.
  • Sensor Interface: Can be used in sensor interface circuits for signal processing and control.


The BSS126H6327XTSA2 is a high-speed N-channel FET that facilitates efficient switching in electronic circuits, providing reliable performance in various applications.

Usage Guide

  • Connection: Connect the source (S), gate (G), and drain (D) pins to the corresponding components in the circuit.
  • Threshold Voltage: Ensure that the gate voltage exceeds the threshold to turn the FET on for proper operation.
  • Current Handling: Take into account the current ratings of the FET to prevent overload conditions.

Frequently Asked Questions

Q: Can the BSS126H6327XTSA2 be used in high-frequency applications?
A: Yes, this FET is suitable for high-frequency applications due to its fast switching speed.


For similar functionalities, consider these alternatives to the BSS126H6327XTSA2:

  • BSS138: Another N-channel FET with similar characteristics for high-speed switching applications.
  • IRLB8721: This MOSFET offers comparable features to the BSS126H6327XTSA2 and can be used as an alternative.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SIPMOS® Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 25 V
FET Feature Depletion Mode Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-SOT23 Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number BSS126

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