• BSP52T1G SOT-223-4
BSP52T1G SOT-223-4

BSP52T1G

NPN Small-Signal Darlington Transistor

Inventory:7,660

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Overview of BSP52T1G

The BSP52T1G is an N-channel enhancement mode field-effect transistor (FET) designed for use in various electronic applications. This transistor offers low on-resistance and high drain-source voltage capability, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSP52T1G FET for a visual representation.

Key Features

  • Enhancement Mode FET: Operates in the enhancement mode for easy control of the channel conductivity.
  • Low On-Resistance: Provides efficient power handling with minimal voltage drop across the transistor.
  • High Voltage Capability: Withstands high drain-source voltages, making it suitable for various power applications.
  • Fast Switching Speed: Offers rapid switching times for responsive circuit operation.
  • High Power Dissipation: Capable of dissipating heat efficiently to maintain optimal performance.

Note: For detailed technical specifications, please refer to the BSP52T1G datasheet.

Application

  • Power Management: Ideal for power management circuits in electronic devices.
  • Switching Circuits: Used in electronic switching circuits for controlling power flow.
  • Voltage Regulation: Suitable for voltage regulation and control applications.

Functionality

The BSP52T1G is an N-channel FET that allows for efficient power handling and control in electronic circuits. It offers a balance of performance and reliability for various applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal for controlling the FET conductivity.
  • Drain-Source Connection: Connect the load or circuit between the drain and source terminals.
  • Heat Management: Ensure proper heat sinking to maintain the FET within its operating temperature limits.

Frequently Asked Questions

Q: Is the BSP52T1G suitable for high-frequency switching applications?
A: Yes, the BSP52T1G offers fast switching speeds, making it suitable for high-frequency switching circuits.

Equivalent

For alternatives with similar functionalities, consider the following:

  • BSS138: A comparable N-channel FET with similar characteristics to the BSP52T1G.
  • IRF540: This power MOSFET offers high voltage capability and low on-resistance for power applications.

BSP52T1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-223-4 / TO-261-4D Case Outline 0.0318
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1000
ON Target N Polarity NPN
IC Continuous (A) 1 V(BR)CEO Min (V) 80
VCE(sat) Max (V) 1.3 hFE Min (k) 2
Pricing ($/Unit) $0.1068Sample

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BSP52T1G

NPN Small-Signal Darlington Transistor

Inventory:

7,660