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BSP372L6327

Reliable N-channel FET for voltage regulation and switching

Inventory:8,372

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Overview of BSP372L6327

The BSP372L6327 is a P-channel enhancement mode field-effect transistor (FET) designed for high-side load switching applications in various electronic circuits. It is specifically tailored for use in automotive applications, offering robust performance and reliability.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • G: Gate
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSP372L6327 FET for a visual representation.

Key Features

  • P-Channel Enhancement Mode: The BSP372L6327 features a P-channel enhancement mode for efficient load switching.
  • Automotive Grade: Designed for automotive applications, this FET meets the stringent requirements of the automotive industry.
  • High Side Switching: Ideal for high-side load switching applications in electronic circuits.
  • Low On-Resistance: Offers low on-resistance to minimize power losses during operation.
  • Overcurrent Protection: Includes built-in protection mechanisms to safeguard against overcurrent conditions.

Note: For detailed technical specifications, please refer to the BSP372L6327 datasheet.

Application

  • Automotive Electronics: Suited for various automotive electronic systems requiring high-side switching.
  • Power Management: Used in power management circuits for efficient load control.
  • Industrial Applications: Applicable in industrial environments for reliable high-side switching operations.

Functionality

The BSP372L6327 is a P-channel FET designed for high-side load switching applications, providing efficient and reliable performance in automotive and industrial electronic systems.

Usage Guide

  • Load Connection: Connect the load to the Drain pin (D) and the circuit ground to the Source pin (S).
  • Gate Control: Apply appropriate gate voltages to turn the FET on and off for load switching.
  • Protection: Implement external overcurrent protection if required to ensure safe operation.

Frequently Asked Questions

Q: What is the typical operating voltage range of the BSP372L6327?
A: The BSP372L6327 operates within a typical voltage range of -30V to -12V.

Q: Is the BSP372L6327 suitable for high-temperature environments?
A: Yes, the BSP372L6327 is designed to withstand high operating temperatures, making it suitable for automotive applications with elevated temperatures.

Equivalent

For similar functionalities, consider these alternatives to the BSP372L6327:

  • BSP315PA3148: Another P-channel FET designed for automotive applications with comparable specifications.
  • BSP78KE6327: A high-side switch FET tailored for industrial use, offering similar performance characteristics to the BSP372L6327.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SIPMOS® Product Status Obsolete
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 310mOhm @ 1.7A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA Vgs (Max) ±14V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA

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BSP372L6327

Reliable N-channel FET for voltage regulation and switching

Inventory:

8,372