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BSM75GB170DN2

High-current switching device for efficient power conversi

Inventory:6,306

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Overview of BSM75GB170DN2

The BSM75GB170DN2 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications in various electronic systems. It combines the features of a MOSFET for high input impedance and a bipolar transistor for high-voltage and high-current capability, making it suitable for power conversion and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector: Terminal connected to the collector of the bipolar transistor
  • Emitter: Terminal connected to the emitter of the bipolar transistor
  • G: Gate (Input) terminal for the IGBT
  • VCE: Collector-Emitter Voltage terminal
  • VGE: Gate-Emitter Voltage terminal
  • CT: Threshold Capacitor terminal
  • VP: Positive Voltage Supply terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM75GB170DN2 IGBT module for a visual representation.

Key Features

  • High Power Handling Capacity: The BSM75GB170DN2 is capable of handling high power levels, making it suitable for power electronic applications.
  • Low Saturation Voltage: The IGBT module features low saturation voltage, resulting in reduced power losses and improved efficiency.
  • Fast Switching Speed: With fast turn-on and turn-off characteristics, the BSM75GB170DN2 allows for efficient power control.
  • Overcurrent Protection: Includes built-in overcurrent protection features to safeguard the device and external circuitry.
  • High Input Impedance: The IGBT module offers high input impedance for easier interfacing with control circuitry.

Note: For detailed technical specifications, please refer to the BSM75GB170DN2 datasheet.

Application

  • Power Inverters: Ideal for use in power inverter systems for converting DC power to AC power efficiently.
  • Motor Drives: Suitable for motor control applications where high power handling and switching speeds are required.
  • Industrial Automation: Used in industrial automation systems for controlling high-power equipment.
  • Renewable Energy Systems: Deployed in renewable energy systems such as solar inverters and wind turbine converters for power conversion.

Functionality

The BSM75GB170DN2 IGBT module combines the voltage control feature of a MOSFET with the high-current capability of a bipolar transistor, enabling efficient power switching and control in various applications.

Usage Guide

  • Power Connections: Connect the positive voltage supply to the VP terminal and ensure proper connections of the collector and emitter terminals for power flow.
  • Gate Control: Apply appropriate gate-emitter voltage signals to control the switching behavior of the IGBT.
  • Heat Dissipation: Implement adequate heat sinking and cooling mechanisms to manage the heat generated during operation.

Frequently Asked Questions

Q: Can the BSM75GB170DN2 be used in high-frequency switching applications?
A: While the BSM75GB170DN2 offers fast switching speeds, it is recommended to refer to the datasheet for specific frequency limitations based on the application requirements.

Equivalent

For similar functionalities, consider these alternatives to the BSM75GB170DN2:

  • IXGH75N170A: A high-power IGBT module with comparable performance characteristics to the BSM75GB170DN2.
  • FS75R12KE3: This IGBT module offers similar power handling capabilities and features for power electronic applications.
  • SKM75GB128D: An alternative IGBT module suitable for high-voltage and high-current applications like the BSM75GB170DN2.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Dual
Collector- Emitter Voltage VCEO Max 1.7 kV Continuous Collector Current at 25 C 110 A
Package / Case 32 mm Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Brand Infineon Technologies
Height 30.5 mm Length 94 mm
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Factory Pack Quantity 10
Subcategory IGBTs Technology Si
Width 34 mm Part # Aliases SP000100464 BSM75GB170DN2HOSA1
Unit Weight 8.818490 oz

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BSM75GB170DN2

High-current switching device for efficient power conversi

Inventory:

6,306