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BSM50GB120DN2

Channel Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES

Quantity Unit Price(USD) Ext. Price
1 $171.320 $171.32
200 $66.299 $13,259.80
500 $63.969 $31,984.50
1000 $62.817 $62,817.00

Inventory:3,928

*The price is for reference only.
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Overview of BSM50GB120DN2

The BSM50GB120DN2 is a 1200V/50A IGBT power module designed for high power switching applications such as motor control, renewable energy systems, and industrial automation. It integrates the required IGBT transistors, diodes, and gate drivers into a single compact module, offering a convenient solution for high voltage and high current applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • IC: Continuous Collector Current
  • IG: Gate Current
  • VCC: Positive power supply
  • GND: Power ground
  • UG: Under Voltage Lock-Out (UVLO) Pin
  • OV: Over Voltage Protection (OVP) Pin
  • FG: Fault Feedback (FF) Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSM50GB120DN2 for a visual representation.

Key Features

  • High Voltage and Current Rating: Suitable for applications requiring high power switching capabilities.
  • Integrated Design: Combines IGBT transistors, diodes, and gate drivers into a single module, simplifying system design.
  • Low Saturation Voltage: Offers efficient power conversion with minimal voltage drop during conduction.
  • Temperature Sensing Function: Includes a built-in temperature sensor for monitoring device temperature and preventing thermal damage.
  • Short Circuit Robustness: Exhibits robustness against short circuit conditions, ensuring reliable operation under various load conditions.

Note: For detailed technical specifications, please refer to the BSM50GB120DN2 datasheet.

Application

  • Motor Drives: Ideal for use in high-power motor control applications, such as electric vehicles and industrial machinery.
  • Solar Inverters: Suitable for high voltage DC-AC conversion in solar power systems and inverters.
  • Power Supplies: Used in high power switching power supply units for industrial and commercial applications.

Functionality

The BSM50GB120DN2 power module integrates high voltage IGBT transistors, diodes, and gate drivers into a single package, providing a reliable and efficient solution for high power switching applications.

Usage Guide

  • Power Supply: Connect VCC and GND to the appropriate power supply voltages.
  • Gate Control: Apply the required gate voltage (VGE) to control the switching operation of the IGBT transistors.
  • Temperature Monitoring: Monitor the device temperature through the built-in temperature sensing function to ensure proper thermal management.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage (VCE) of the BSM50GB120DN2?
A: The BSM50GB120DN2 supports a maximum VCE of 1200V, making it suitable for high voltage applications.

Q: Is the BSM50GB120DN2 suitable for use in electric vehicle motor drives?
A: Yes, the BSM50GB120DN2 is commonly used in high-power motor drive systems for electric vehicles due to its high voltage and current ratings.

Equivalent

For similar functionalities, consider these alternatives to the BSM50GB120DN2:

  • FS75R12KE3: This is a high-power IGBT module from Infineon Technologies with comparable voltage and current ratings.
  • CM150DY-24H: A power IGBT module from Powerex Inc., offering similar high power switching capabilities for industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Half Bridge
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 78 A Gate-Emitter Leakage Current 200 nA
Pd - Power Dissipation 400 W Package / Case Half Bridge1
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 150 C
Brand Infineon Technologies Height 30.5 mm
Length 94 mm Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs
Technology Si Width 34 mm
Part # Aliases SP000095922 BSM50GB120DN2HOSA1 Unit Weight 6.248606 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

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BSM50GB120DN2

Channel Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES

Inventory:

3,928