• BSH103,215 SOT23-3
  • BSH103,215 SOT23-3
  • BSH103,215 SOT23-3
  • BSH103,215 SOT23-3
BSH103,215 SOT23-3
BSH103,215 SOT23-3
BSH103,215 SOT23-3
BSH103,215 SOT23-3

BSH103,215

N-channel MOSFET transistor with 30V voltage and 0.85A current

Quantity Unit Price(USD) Ext. Price
5 $0.089 $0.44
50 $0.072 $3.60
150 $0.063 $9.45
500 $0.057 $28.50
3000 $0.051 $153.00
6000 $0.049 $294.00

Inventory:7,462

*The price is for reference only.
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Overview of BSH103,215

The BSH103,215 is a N-channel enhancement mode field-effect transistor (FET) designed for various switching applications. It features a low threshold voltage and high-speed switching capabilities, making it suitable for use in electronic circuits requiring efficient switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSH103,215 FET for a visual representation.

Key Features

  • N-Channel FET: The BSH103,215 is an N-channel FET, allowing for low-side switching in electronic circuits.
  • Low Threshold Voltage: With a low threshold voltage, this FET can be easily driven by logic level signals.
  • High-Speed Switching: The BSH103,215 offers fast switching times, ideal for applications requiring rapid switching action.
  • High Current Capability: This FET can handle relatively high current levels, suitable for moderate power applications.
  • Small Package: Available in a compact package, the BSH103,215 can be easily integrated into small electronic devices.

Note: For detailed technical specifications, please refer to the BSH103,215 datasheet.

Application

  • Switching Circuits: Ideal for use in electronic circuits requiring efficient switching of signals or power.
  • Power Management: Suitable for power management applications where controlled switching is necessary.
  • Voltage Regulation: Can be used in voltage regulation circuits for maintaining stable output voltages.

Functionality

The BSH103,215 N-channel FET provides a reliable and effective solution for switching applications in electronic circuits. It offers low threshold voltage and high-speed switching performance for efficient operation.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the controlling signal source.
  • Drain Connection: Connect the drain (D) pin to the load or circuit being controlled.
  • Source Connection: Connect the source (S) pin to the ground reference.

Frequently Asked Questions

Q: Can the BSH103,215 be used for PWM (Pulse Width Modulation) applications?
A: Yes, the BSH103,215 is suitable for PWM applications due to its high-speed switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the BSH103,215:

  • BSH203,215: Another N-channel FET with higher current handling capability and similar switching characteristics.
  • BSH113,215: A complementary P-channel FET that can be used in conjunction with the BSH103,215 for bidirectional switching applications.

BSH103,215

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 850 mA Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 2.1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Brand Nexperia
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Part # Aliases 934054713215
Unit Weight 0.000282 oz

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BSH103,215

N-channel MOSFET transistor with 30V voltage and 0.85A current

Inventory:

7,462