BSH103,215
N-channel MOSFET transistor with 30V voltage and 0.85A current
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.089 | $0.44 |
50 | $0.072 | $3.60 |
150 | $0.063 | $9.45 |
500 | $0.057 | $28.50 |
3000 | $0.051 | $153.00 |
6000 | $0.049 | $294.00 |
Inventory:7,462
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Part Number : BSH103,215
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Package/Case : SOT23-3
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Manufacturer : Nexperia
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Components Classification : Single FETs, MOSFETs
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Datesheet : BSH103,215 DataSheet (PDF)
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Series : BSH103
The BSH103,215 is a N-channel enhancement mode field-effect transistor (FET) designed for various switching applications. It features a low threshold voltage and high-speed switching capabilities, making it suitable for use in electronic circuits requiring efficient switching. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSH103,215 FET for a visual representation. Note: For detailed technical specifications, please refer to the BSH103,215 datasheet. Functionality The BSH103,215 N-channel FET provides a reliable and effective solution for switching applications in electronic circuits. It offers low threshold voltage and high-speed switching performance for efficient operation. Usage Guide Q: Can the BSH103,215 be used for PWM (Pulse Width Modulation) applications? For similar functionalities, consider these alternatives to the BSH103,215:Overview of BSH103,215
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSH103,215 is suitable for PWM applications due to its high-speed switching characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 850 mA | Rds On - Drain-Source Resistance | 400 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 2.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 750 mW |
Channel Mode | Enhancement | Brand | Nexperia |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Part # Aliases | 934054713215 |
Unit Weight | 0.000282 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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BSH103,215
N-channel MOSFET transistor with 30V voltage and 0.85A current
Inventory:
7,462Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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