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BSC093N04LSGATMA1

Featuring a unipolar configuration

Inventory:9,012

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Overview of BSC093N04LSGATMA1

The BSC093N04LSGATMA1 is an N-channel Power MOSFET designed for use in high-current, high-speed switching applications. This MOSFET features a low on-state resistance and a rugged internal diode, making it ideal for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the switching of the MOSFET
  • Drain (D): Connection to the power supply or load
  • Source (S): Ground reference for the MOSFET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC093N04LSGATMA1 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The BSC093N04LSGATMA1 offers a low RDS(on) for efficient power switching and minimal power dissipation.
  • High Current Capability: This MOSFET can handle high continuous and pulsed currents, making it suitable for power applications.
  • Rugged Internal Diode: The built-in diode enhances the MOSFET's performance in inductive load applications.
  • Fast Switching Speed: With its high-speed switching characteristics, this MOSFET is suitable for applications requiring rapid switching.
  • Enhanced Thermal Performance: The MOSFET's package is designed for enhanced thermal dissipation, ensuring reliable operation at high power levels.

Note: For detailed technical specifications, please refer to the BSC093N04LSGATMA1 datasheet.

Application

  • Power Management: Suitable for power supply switching, DC-DC converters, and other power management applications.
  • Motor Control: Ideal for controlling DC motors, stepper motors, and other motor drive applications.
  • Inverter and UPS: Used in inverters and uninterruptible power supplies for efficient power switching.

Functionality

The BSC093N04LSGATMA1 is a high-performance N-channel Power MOSFET designed to enable efficient power switching and motor control in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the ON/OFF states of the MOSFET.
  • Load Connection: Connect the load/device between the Drain (D) and Source (S) terminals.
  • Heat Dissipation: Ensure adequate thermal management to maintain the MOSFET's temperature within safe limits.

Frequently Asked Questions

Q: Is the BSC093N04LSGATMA1 suitable for automotive applications?
A: Yes, this MOSFET is designed for automotive-grade performance and is suitable for automotive applications requiring high-current switching.

Equivalent

For similar functionalities, consider these alternatives to the BSC093N04LSGATMA1:

  • IRF3205: An N-channel Power MOSFET with similar power handling and switching characteristics.
  • FDMS86181: This MOSFET offers comparable performance and features for high-current and high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS; RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr H28 productClassification COM
productStatusInfo active hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000387929
fourBlockPackageName PG-TDSON-8-5 rohsCompliant yes
opn BSC093N04LSGATMA1 completelyPbFree no
sapMatnrSali SP000387929

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packageimg

BSC093N04LSGATMA1

Featuring a unipolar configuration

Inventory:

9,012